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BUT11F

Description
isc silicon npn power transistor
CategoryDiscrete semiconductor    The transistor   
File Size74KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BUT11F Overview

isc silicon npn power transistor

BUT11F Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT11F
DESCRIPTION
·High
Voltage
·High
Speed Switching
·
APPLICATIONS
·Converters
·Inverters
·Switching
regulators
·Motor
control systems
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
850
400
9
5
10
2
4
20
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
3.95
UNIT
K/W
isc Website:www.iscsemi.cn
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