DRAM MODULE
KMM372F804BS
KMM372F804BS EDO Mode
8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V
GENERAL DESCRIPTION
The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM
high density memory module. The Samsung KMM372F804B
consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
TSOP-II 400mil packages and two 16 bits driver IC in TSSOP
package mounted on a 168-pin glass-epoxy substrate. A 0.1
or 0.22uF decoupling capacitor is mounted on the printed cir-
cuit board for each DRAM. The KMM372F804B is a Dual In-
line Memory Module and is intended for mounting into 168 pin
edge connector sockets.
FEATURES
• Part Identification
- KMM372F804BS(4096cycles/64ms Ref. TSOP ll)
• Extended Data Out Mode Operation
• CAS-before-RAS Refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single 3.3V±0.3V power supply
• JEDEC standard pinout & Buffered PDpin
• Buffered input except RAS and DQ
• PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
18ns
20ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
PIN CONFIGURATIONS
Pin Front Pin Front Pin Front Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
CC
DQ14
DQ15
DQ16
DQ17
V
SS
RSVD
RSVD
V
CC
W0
CAS0
29 *CAS2 57
30 RAS0 58
31 OE0 59
60
V
SS
32
61
A0
33
62
34
A2
63
35
A4
64
36
A6
65
A8
37
66
38
A10
67
A12
39
68
40
V
CC
41 RFU 69
42 RFU 70
71
43
V
SS
44 OE2 72
45 RAS2 73
46 CAS4 74
47 *CAS6 75
76
W2
48
77
V
CC
49
50 RSVD 78
51 RSVD 79
52 DQ18 80
53 DQ19 81
82
V
SS
54
55 DQ20 83
56 DQ21 84
DQ22
DQ23
V
CC
DQ24
RFU
RFU
RFU
RFU
DQ25
DQ26
DQ27
V
SS
DQ28
DQ29
DQ30
DQ31
V
CC
DQ32
DQ33
DQ34
DQ35
V
SS
PD1
PD3
PD5
PD7
ID0
V
CC
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
V
SS
DQ36
DQ37
DQ38
DQ39
V
CC
DQ40
DQ41
DQ42
DQ43
DQ44
V
SS
DQ45
DQ46
DQ47
DQ48
DQ49
V
CC
DQ50
DQ51
DQ52
DQ53
V
SS
RSVD
RSVD
V
CC
RFU
CAS1
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
*CAS3
RAS1
RFU
V
SS
A1
A3
A5
A7
A9
A11
*A13
V
CC
RFU
B0
V
SS
RFU
RAS3
CAS5
*CAS7
PDE
V
CC
RSVD
RSVD
DQ54
DQ55
V
SS
DQ56
DQ57
Pin Back
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
DQ58
DQ59
V
CC
DQ60
RFU
RFU
RFU
RFU
DQ61
DQ62
DQ63
V
SS
DQ64
DQ65
DQ66
DQ67
V
CC
DQ68
DQ69
DQ70
DQ71
V
SS
PD2
PD4
PD6
PD8
ID1
V
CC
PIN NAMES
Pin Names
A0, B0, A1 - A11
DQ0 - DQ71
W0, W2
OE0, OE2
RAS0 - RAS3
CAS0, 1,4,5
V
CC
V
SS
NC
PDE
PD1 - 8
ID0 - 1
RSVD
RFU
Function
Address Input(4K ref.)
Data In/Out
Read/Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power(+3.3V)
Ground
No Connection
Presence Detect Enable
Presence Detect
ID bit
Reserved Use
Reserved for Future Use
Pins marked¡®*¡¯are not used in this module.
PD & ID Table
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
ID0
ID1
50NS
0
0
1
1
1
0
0
0
0
0
60NS
0
0
1
1
1
1
1
0
0
0
PD Note :PD & ID Terminals must each be pulled up through a register to V
CC
at the next higher
level assembly. PDs will be either open (NC) or driven to V
SS
via on-board buffer circuits.
PD : 0 for Vol of Drive IC & 1 for N.C
ID Note : IDs will be either open (NC) or connected directly to V
SS
without a buffer.
ID : 0 for Vss & 1 for N.C
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
RAS1
RAS0
CAS0
W0
OE0
A0
A1-A11
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U0
KMM372F804BS
CAS1
CAS5
DQ0
-
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U6
U9
DQ36
-
DQ51
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ52
-
DQ55
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ56
-
DQ71
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U8
U11
RAS3
RAS2
CAS4
W2
OE2
B0
A1-A11
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U3
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
-
DQ19
DQ0
DQ1
DQ2
DQ3
DQ20
-
DQ35
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U2
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U1
U7
U10
DQ0
DQ1
DQ2
DQ3
U4
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U5
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
Vcc
0.1 or 0.22uF Capacitor
under each DRAM
Vss
To all DRAMs
A0
B0
A1-A11
W0, OE0
W2, OE2
U0-U2,U6-U8
U3-U5,U9-U11
U0-U11
U0-U2,U6-U8
U3-U5,U9-U11
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
12
50
KMM372F804BS
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
*2
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Unit
V
V
V
V
*1 : V
CC
+1.3V at pulse width≤15ns, which is measured at V
CC
.
*2 : -1.3V at pulse width≤15ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
KMM372F804BS
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
Min
-
-
Max
760
700
100
760
700
700
640
30
760
700
10
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-10
-10
2.4
-
I
CC1
* : Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
* : Extended Data Out Mode Current * (RAS=V
IL
, CAS cycling : t
HPC
=min)
I
CC5
: Standby Current (RAS=CAS=W=Vcc-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I(
IL)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.3V,
all other pins not under test=0 V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤Vcc)
V
OH
: Output High Voltage Level (I
OH
= -2mA)
V
OL
: Output Low Voltage Level (I
OL
= 2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time, t
HPC
.
DRAM MODULE
CAPACITANCE
(T
A
= 25°C, f = 1MHz)
Item
Input capacitance[A0, B0, A1 - A11]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0 - RAS3]
Input capacitance[CAS0, 1,4,5]
Input/Output capacitance[DQ0 - 71]
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Min
-
-
-
-
-
KMM372F804BS
Max
20
20
31
20
24
Unit
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=3.3V±0.3V. See notes 1,2.)
Test condition : V
ih
/V
il
=2.2/0.7V, V
oh
/V
ol
=2.0/0.8V, output loading CL=100pF
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
OE to output in Low-Z
Output buffer turn-off delay from CAS
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referenced to CAS
Read command hold referenced to RAS
Write command set-up time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
Refresh period
CAS to W delay time
RAS to W delay time
Symbol
Min
-5
Max
Min
104
153
50
18
30
8
8
8
1
30
50
13
36
8
15
10
10
5
5
0
7
30
0
0
-2
0
7
7
13
7
-2
13
64
33
68
38
82
10K
32
20
10K
18
50
8
8
8
1
40
60
15
38
10
18
13
10
5
8
0
10
35
0
0
-2
0
10
10
15
10
-2
15
64
10K
40
25
10K
18
50
60
20
35
84
128
-6
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
7,16
7,13
13
17
9,13
9,13
8
8,13
7
4,13
10,13
13
13
13
14
14
13
13
13
3,4,10
3,4,5,13
3,10,13
3,13
3,13
6,11,13
2
Unit
Note
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OLZ
t
CEZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
CWD
t
RWD
DRAM MODULE
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=3.3V±0.3V. See notes 1,2.)
Parameter
Column address to W delay time
CAS precharge time to W delay time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper page cycle time
Hyper page read-modify-write cycle time
CAS precharge time(Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Output data hold time(C-B-R refresh)
Output buffer turn off delay time from RAS
Output buffer turn off delay time from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper page cycle)
Present Detect Read Cycle
PDE to Valid PD bit
PDE to PD bit Inactive
Symbol
-5
Min
45
47
10
8
3
33
20
70
7
50
35
15
8
18
15
8
5
10
3
8
20
5
5
5
5
13
18
18
18
8
5
10
3
8
20
5
5
5
5
200K
25
77
10
60
40
15
8
Max
Min
53
58
10
8
3
-6
KMM372F804BS
Max
Unit
ns
ns
ns
ns
ns
Note
7
13,18
13
13
3,13
12
12
15
13
13
13
13
13
13
13
6,11
6,13
13
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
WRP
t
WRH
t
OEA
t
OED
t
OEZ
t
OEH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
40
ns
ns
ns
ns
200K
ns
ns
ns
ns
20
18
ns
ns
ns
ns
ns
13
18
ns
ns
ns
ns
ns
ns
ns
t
PD
t
PDOFF
10
2
7
2
10
7
ns
ns
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