SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1604 2SB1604A
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·High speed switching
APPLICATIONS
·For low-voltage switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
2SB1604
V
CBO
Collector-base voltage
2SB1604A
2SB1604
V
CEO
Collector-emitter voltage
2SB1604A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
Open collector
Open base
-40
-5
-10
-20
2
W
V
A
A
Open emitter
-50
-20
V
CONDITIONS
MAX
-40
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SB1604
I
C
=-10mA ;I
B
=0
2SB1604A
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=-10A ;I
B
=-0.33A
I
C
=-10A ;I
B
=-0.33A
V
CB
=-40V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-10V
CONDITIONS
2SB1604 2SB1604A
SYMBOL
MIN
-20
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-40
-0.6
-1.5
-50
-50
45
90
400
100
260
pF
MHz
V
V
µA
µA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A; I
B1
=-I
B2
=-0.1A
0.1
0.5
0.1
µs
µs
µs
h
FE-2
Classifications
Q
90-180
P
130-260
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1604 2SB1604A
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1604 2SB1604A
4
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