7WBD3126
2-Bit Translating Bus
Switch
The 7WBD3126 is an advanced high−speed low−power 2−bit
translating bus switch in ultra−small footprints.
Features
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MARKING
DIAGRAMS
8
1
UDFN8
MU SUFFIX
CASE 517AJ
UDFN8
1.95 x 1.0
CASE 517CA
•
•
•
•
•
•
•
High Speed: t
PD
= 0.25 ns (Max) @ V
CC
= 4.5 V
3
W
Switch Connection Between 2 Ports
Power Down Protection Provided on Inputs
Zero Bounce
TTL−Compatible Control Inputs
Ultra−Small Pb−Free Packages
These are Pb−Free Devices
AGM
G
XM
1
8
Micro8]
DM SUFFIX
CASE 846A
1
1
D125
AYWG
G
1
8
UQFN8
MU SUFFIX
CASE 523AN
AF M*G
G
8
US8
US SUFFIX
CASE 493
1
AD M*G
G
A
= Assembly Location
Y
= Year
W
= Work Week
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2014
1
October, 2014 − Rev. 2
Publication Order Number:
7WBD3126/D
7WBD3126
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
I/O
I
IK
I
OK
I
O
DC Supply Voltage
Control Pin Input Voltage
Switch Input / Output Voltage
Control Pin DC Input Diode Current
Switch I/O Port DC Diode Current
ON−State Switch Current
Continuous Current Through V
CC
or GND
I
CC
I
GND
T
STG
T
L
T
J
q
JA
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
US8 (Note 1)
UDFN8
UQFN8
Micro8
US8
UDFN8
UQFN8
Micro8
V
IN
< GND
V
I/O
< GND
Parameter
Value
−0.5 to +7.0
−0.5 to +7.0
−0.5 to +7.0
−50
−50
$128
$150
$150
$150
−65 to +150
260
150
251
111
208
392
498
1127
601
319
Level 1
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
$200
V
Unit
V
V
V
mA
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
P
D
Power Dissipation in Still Air at 85°C
mW
MSL
F
R
V
ESD
Moisture Sensitivity
Flammability Rating Oxygen Index: 28 to 34
ESD Withstand Voltage
Human Body Mode (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5)
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
I/O
T
A
Dt/DV
Positive DC Supply Voltage
Control Pin Input Voltage
Switch Input / Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
Control Input
Switch I/O
Parameter
Min
4.0
0
0
−55
0
0
Max
5.5
5.5
5.5
+125
5
DC
Unit
V
V
V
°C
nS/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
7WBD3126
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Min
Typ
Max
−1.2
2.0
0.8
2.0
0.8
T
A
=
−555C to +1255C
Min
Max
−1.2
Unit
V
V
V
Symbol
V
IK
V
IH
V
IL
V
OH
I
IN
I
OFF
I
CC
Parameter
Clamp Diode Voltage
High−Level Input Voltage
(Control)
Low−Level Input Voltage
(Control)
Output Voltage High
Input Leakage Current
Power Off Leakage Current
Quiescent Supply Current
Conditions
I
I/O
= −18 mA
V
CC
(V)
4.5
4.0 to
5.5
4.0 to
5.5
See Figure 5
0
v
V
IN
v
5.5 V
V
I/O
= 0 to 5.5 V
I
O
= 0,
V
IN
= V
CC
or 0 V
OE1 = OE2 = V
CC
OE1 = OE2 = GND
One input at 3.4 V;
Other inputs at V
CC
or GND
V
I/O
= 0,
I
I/O
= 64 mA
I
I/O
= 30 mA
V
I/O
= 2.4,
I
I/O
= 15 mA
V
I/O
= 2.4,
I
I/O
= 15 mA
4.0
50
70
70
5.5
0
5.5
±1.0
±0.1
5.5
±1.0
±1.0
2.5
mA
mA
mA
±0.1
±0.1
±1.0
±1.0
mA
mA
DI
CC
Increase in Supply Current
(Control Pin)
Switch ON Resistance
R
ON
4.5
3
3
15
7
7
50
7
7
50
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS
T
A
= 25
5C
Min
Typ
Max
0.25
0.8
0.8
0.8
0.8
2.5
3.0
3.0
2.9
2.5
10
5
4.2
4.6
4.8
4.4
0.8
0.8
0.8
0.8
T
A
=
−555C to +1255C
Min
Max
0.25
4.2
4.6
4.8
4.4
pF
pF
pF
ns
Unit
ns
ns
Symbol
t
PD
t
EN
Parameter
Propagation Delay,
Bus to Bus
Output Enable Time
Test Condition
See Figure 6
See Figure 6
V
CC
(V)
4.0 to
5.5
4.5 to
5.5
4.0
t
DIS
Output Disable Time
4.5 to
5.5
4.0
C
IN
C
IO(ON)
C
IO(OFF)
Control Input Capacitance
Switch On Capacitance
Switch Off Capacitance
V
IN
= 5 or 0 V
Switch ON
Switch OFF
5.0
5.0
5.0
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4
7WBD3126
TYPICAL DC CHARACTERISTICS
3.75
V
OH
, HIGH LEVEL OUTPUT VOLT-
AGE (V)
3.50
3.25
3.00
2.75
2.50
2.25
2.00
4.50
4.75
5.00
5.25
T
A
= +85°C
V
IN
= V
CC
5.50
5.75
I
OH
=
−0.1 mA
−6 mA
−12 mA
−24 mA
V
CC
, SUPPLY VOLTAGE (V)
3.75
V
OH
, HIGH LEVEL OUTPUT VOLT-
AGE (V)
3.50
3.25
3.00
2.75
2.50
2.25
2.00
4.50
4.75
5.00
5.25
T
A
= +25°C
V
IN
= V
CC
5.50
5.75
I
OH
=
−0.1 mA
−6 mA
−12 mA
−24 mA
V
CC
, SUPPLY VOLTAGE (V)
3.75
V
OH
, HIGH LEVEL OUTPUT VOLT-
AGE (V)
3.50
3.25
3.00
2.75
2.50
2.25
2.00
4.50
4.75
5.00
5.25
T
A
= −40°C
V
IN
= V
CC
5.50
5.75
I
OH
=
−0.1 mA
−6 mA
−12 mA
−24 mA
V
CC
, SUPPLY VOLTAGE (V)
Figure 5. Output Voltage High vs Supply Voltage
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