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IDT70T653MS12BC8

Description
Dual-Port SRAM, 512KX36, 12ns, CMOS, PBGA256, BGA-256
Categorystorage    storage   
File Size304KB,24 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT70T653MS12BC8 Overview

Dual-Port SRAM, 512KX36, 12ns, CMOS, PBGA256, BGA-256

IDT70T653MS12BC8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionLBGA, BGA256,16X16,40
Contacts256
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeS-PBGA-B256
JESD-609 codee0
length17 mm
memory density18874368 bit
Memory IC TypeDUAL-PORT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5,2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum standby current0.02 A
Minimum standby current2.4 V
Maximum slew rate0.71 mA
Maximum supply voltage (Vsup)2.6 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width17 mm
Base Number Matches1
Features
HIGH-SPEED 2.5V
512K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
PRELIMINARY
IDT70T653M
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T653M easily expands data bus width to 72 bits or
more using the Busy Input when cascading more than one
device
Busy input for port contention management
Interrupt Flags
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Includes JTAG functionality
Available in a 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
BE
3L
BE
2L
BE
1L
BE
0L
BE
3R
BE
2R
BE
1R
BE
0R
R/
W
L
CE
0L
CE
1L
BB
EE
01
LL
BB
EE
23
LL
BBBB
EEEE
3210
R RRR
R/
W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout0-8_R
Dout9-17_L
Dout9-17_R
Dout18-26_L Dout18-26_R
Dout27-35_L Dout27-35_R
OE
R
512K x 36
MEMORY
ARRAY
I/O
0L-
I/O
35L
Di n_L
Di n_R
I/O
0R -
I/O
35R
A
18L
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
A
0R
CE
0L
CE
1L
OE
L
R/W
L
BUSY
L
SEM
L
INT
L(1)
ZZ
L(2)
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
R/W
R
CE
0R
CE
1R
TDI
TD O
JTAG
TC K
TMS
TRST
BUSY
R
SEM
R
INT
R(1)
ZZ
CONTROL
LOGIC
ZZ
R(2)
NOTES:
1.
INT
is non-tri-state totem-pole outputs (push-pull).
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx
and the sleep mode
pins themselves (ZZx) are not affected during sleep mode.
5679 drw 01
NOVEMBER 2003
DSC-5679/2
1
©2003 Integrated Device Technology, Inc.

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