HMC-ALH216
v03.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
This HMC-ALH216 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Features
Noise Figure: 2.5 dB @ 20 GHz
Gain: 18 dB
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 90 mA
Die Size: 2.25 x 1.58 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH216 is a GaAs MMIC HEMT Wideband
Low Noise Amplifier die which operates between 14
and 27 GHz. The amplifier provides 18 dB of gain,
2.5 dB noise figure and +14 dBm of output power at
1 dB gain compression while requiring only 90 mA
from a +4V supply voltage. The HMC-ALH216 amplifier
is ideal for integration into Multi-Chip-Modules
(MCMs) due to its small size.
Electrical Specifi cations*
,
T
A
= +25° C, Vdd= +4V
Parameter
Frequency Range
Gain
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.)
*Unless otherwise indicated, all measurements are from probed die
14
Min.
Typ.
14 - 27
18
0.02
2.7
15
15
90
4.5
Max.
Units
GHz
dB
dB / °C
dB
dB
dB
mA
1 - 126
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH216
v03.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Noise Figure vs. Frequency
2.8
Linear Gain vs. Frequency
20
19.5
1
LOW NOISE AMPLIFIERS - CHIP
1 - 127
GAIN (dB)
18.5
18
NOISE FIGURE (dB)
19
2.6
2.4
17.5
17
16.5
16
15
17
19
21
23
25
27
FREQUENCY (GHz)
2.2
2
1.8
15
17
19
21
23
25
27
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
15
17
19
21
23
25
27
FREQUENCY (GHz)
Output Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
15
17
19
21
23
25
27
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH216
v03.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
RF Input Power
Channel Temperature
Continuous Pdiss (T=85°C)
(derate 14.9 mW/C above 85°C)
Thermal Resistance
(Channel to die bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-1 to +0.3 Vdc
6 dBm
180 °C
1.4 W
67 °C/W
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-1 (Gel Pack)
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 128
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH216
v03.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. See assembly for
required external components.
Interface Schematic
1
Vdd
2, 6
3, 5
Vgg
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
This pad is AC coupled
and matched to 50 Ohms.
Die bottom must be connected to RF/DC ground.
4
RFOUT
Die bottom
GND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 129
LOW NOISE AMPLIFIERS - CHIP
HMC-ALH216
v03.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output
Note 3: Part can be biased from either side.
1 - 130
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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