FSU01LG
General Purpose GaAs FET
FEATURES
• High Output Power: P1dB = 20.0dBm (Typ.)
• High Associated Gain: G1dB = 19.0dB (Typ.)
• Low Noise Figure:
NF=0.55dB (Typ.)@f=2GHz
• Low Bias Conditions: VDS=3V, 10mA
• Cost Effective Hermetic Microstrip Package
• Tape and Reel Available
DESCRIPTION
The FSU01LG is a high performance, low noise, GaAs FET designed for
PCS/PCN applications as a driver in the 2GHz band.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Symbol
VDS
VGS
Ptot
Tstg
Tch
Condition
Rating
12.0
-5
Unit
V
V
mW
°C
°C
Note
375
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Noise Figure
Associated Gain
Thermal Resistance
AVAILABLE CASE STYLES:
LG
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
NF
Gas
Rth
Test Conditions
VDS = 3V, VGS = 0V
VDS = 3V, IDS = 27mA
VDS = 3V, IDS = 2.7mA
IGS = -2.7µA
VDS = 6V
IDS
=
40mA
f = 2GHz
VDS = 3V
IDS
=
10mA
f = 2GHz
Channel to Case
Min.
35
-
-0.7
-5
19.0
18.0
-
-
-
Limit
Typ. Max.
55
75
50
-
-1.2
-
20.0
19.0
0.55
18.5
300
-1.7
-
-
-
-
-
400
Unit
mA
mS
V
V
dBm
dB
dB
dB
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1
FSU01LG
General Purpose GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
400
Total Power Dissipation (mW)
60
Drain Current (mA)
300
50
-0.2V
VGS =0V
200
40
30
20
10
-0.4V
-0.6V
-0.8V
-1.0V
-1.2V
100
0
50
100
150
200
1
2
3
4
5
Case Temperature (°C)
Drain-Source Voltage (V)
ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT
IDS
=
10mA
f = 2.0 GHz
19.5
Associated Gain (dB)
19.0
18.5
18.0
17.5
VDS = 6V
5V
NOISE FIGURE vs. DRAIN-SOURCE CURRENT
IDS
=
10mA
f = 2.0 GHz
0.9
VDS = 6V
Noise Figure (dB)
4V
0.8
0.7
0.6
0.5
5V
4V
2, 3V
2V
10
20
30
40
10
20
30
40
Drain-Source Current (mA)
Drain-Source Current (mA)
2
FSU01LG
General Purpose GaAs FET
+j50
+j100
+j25
2
3
4 GHz
S11
S22
+90°
0.2
S21
S12
+j10
+j250
1
2
1
4 GHz
0.4 GHz
4
0.4 GHz
3
0
10
25
50Ω
100
250
0.4 GHz
0.4 GHz
180°
3
2
1
.05
0.1
0°
SCALE FOR |S21|
SCALE FOR |S12|
1
-j10
2
4 GHz
4 GHz
3
1
-j250
-j25
3
2
-j100
-90°
-j50
S-PARAMETERS
VDS =6V, IDS = 40mA
FREQUENCY
(MHZ)
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
S11
MAG
.987
.985
.974
.966
.954
.936
.935
.910
.904
.888
.871
.856
.844
.829
.812
.798
.788
.779
.769
S21
ANG
-13.8
-20.3
-27.1
-34.1
-40.0
-47.0
-53.3
-58.7
-65.4
-71.0
-77.0
-82.5
-88.1
-93.3
-98.4
-103.1
-107.9
-112.6
-117.3
S12
ANG
168.3
162.8
157.0
151.3
146.4
140.5
135.2
130.8
125.2
120.7
115.5
110.9
106.2
101.9
97.7
93.8
89.7
85.6
81.7
S22
ANG
77.9
76.2
72.0
68.6
65.2
60.3
56.5
51.8
48.8
45.2
42.6
39.5
35.7
30.9
27.2
26.0
22.9
20.9
19.4
MAG
4.507
4.488
4.421
4.367
4.309
4.212
4.158
4.037
3.980
3.885
3.797
3.696
3.609
3.511
3.400
3.323
3.249
3.176
3.101
MAG
.011
.016
.021
.026
.030
.035
.038
.043
.047
.049
.052
.055
.057
.060
.060
.061
.062
.063
.063
MAG
.812
.812
.807
.803
.793
.786
.778
.766
.761
.748
.739
.729
.716
.704
.692
.687
.681
.674
.668
ANG
-6.7
-10.0
-13.2
-16.4
-19.8
-23.0
-25.8
-28.9
-31.8
-34.3
-37.5
-40.2
-43.0
-45.8
-47.9
-50.3
-52.8
-55.3
-58.0
3
FSU01LG
General Purpose GaAs FET
OUTPUT POWER & IM3 vs. INPUT POWER
20
18
16
Total Output Power (dBm)
14
12
10
8
6
4
2
0
-2
-4
-6
VDS = 6V
f = 2 GHz
∆f
= +1 MHz
IDS = 40mA
Pout
Single Tone
2-Tone
-10
-20
-40
IM3
-50
-12 -10 -8 -6
-4
-2
0
2
4
6
-60
Total Input Power (dBm)
4
IM3 (dBc)
-30
FSU01LG
General Purpose GaAs FET
Case Style "LG"
Metal-Ceramic Package
4.78±0.5
1.5±0.3
(0.059)
1.78±0.15 1.5±0.3
(0.07)
(0.059)
1.5±0.3
(0.059)
1.0
(0.039)
1
1.78±0.15 1.5±0.3
(0.07)
(0.059)
4.78±0.5
4
3
2
0.5
(0.02)
Gold Plated Leads
1.3 Max
(0.051)
1.
2.
3.
4.
0.1
(0.004)
Gate
Source
Drain
Source
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
5
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