JMnic
Product Specification
Silicon PNP Power Transistors
2SB536
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD381
・Low
collector saturation voltage
APPLICATIONS
・Audio
frequency power amplifier
・Low
speed power switching
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
T
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-50~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-130
-120
-5
-1.5
-3.0
-0.3
1.5
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB536
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA; I
B
=0
-120
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-1A; I
B
=-0.1A
-2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-1A; I
B
=-0.1A
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-1.0
μA
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
-1.0
μA
h
FE-1
DC current gain
I
C
=-5mA ; V
CE
=-5V
25
h
FE-2
DC current gain
I
C
=-0.3A ; V
CE
=-5V
40
250
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V; f=1MHz
35
pF
f
T
Transition frequency
I
C
=-0.1A ; V
CE
=-5V
40
MHz
h
FE-2
Classifications
N
40-80
M
60-120
L
80-160
K
120-250
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB536
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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