JMnic
Product Specification
Silicon PNP Power Transistors
2SB947 2SB947A
DESCRIPTION
・With
TO-220Fa package
・High
speed switching
・Low
collector saturation voltage
APPLICATIONS
・For
low-voltage switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB947
V
CBO
Collector-base voltage
2SB947A
2SB947
V
CEO
Collector-emitter voltage
2SB947A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
35
150
-55~150
℃
℃
Open collector
Open base
-40
-5
-10
-15
2
W
V
A
A
Open emitter
-50
-20
V
CONDITIONS
VALUE
-40
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB947
I
C
=-10mA; I
B
=0
2SB947A
I
C
=-7A ;I
B
=-0.23A
I
C
=-7A ;I
B
=-0.23A
V
CB
=-40V; I
E
=0
V
CB
=-50V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-2A ; V
CE
=-2V
I
C
=-0.5A; V
CE
=-10V,f=10MHz
f=1MHz ; V
CB
=-10V
CONDITIONS
2SB947 2SB947A
MIN
-20
TYP.
MAX
UNIT
V
CEO
Collector-emitter
voltage
V
-40
-0.6
-1.5
-50
-50
-50
45
90
150
200
0.1
260
MHz
pF
μs
μs
μs
V
V
μA
μA
μA
V
CEsat
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SB947
I
CBO
Collector
cut-off current
2SB947A
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
t
on
t
s
t
f
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
Trun-on time
Storage time
Fall time
I
C
=-2A ;I
B1
=-I
B2
=-66mA
0.5
0.1
h
FE-2
Classifications
Q
90-180
P
130-260
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB947 2SB947A
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB947 2SB947A
4
JMnic
Product Specification
Silicon PNP Power Transistors
2SB947 2SB947A
5
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