JMnic
Product Specification
Silicon PNP Power Transistor
2SB885
DESCRIPTION
・With
TO-220C package
・DARLINGTON
・High
DC durrent gain
・Low
collector saturation voltage
・Complement
to type 2SD1195
APPLICATIONS
・For
motor drivers,printer hammer
drivers,relay drivers,voltage regulator
control applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-Pulse
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.75
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-110
-100
-6
-5
-8
35
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistor
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB885
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA, R
BE
=∞
-100
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-5mA, I
E
=0
-110
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2.5A ,I
B
=-5mA
-1.5
V
V
BE sat
Base-emitter saturation voltage
I
C
=-2.5A ,I
B
=-5mA
-2.0
V
I
CBO
Collector cut-off current
V
CB
=-80V, I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-3.0
mA
h
FE
DC current gain
I
C
=-2.5A ; V
CE
=-3V
1500
f
T
Transition frequency
V
CE
=-5V, I
C
=-2.5A
20
MHz
Switching times
μs
t
on
Turn-on time
I
C
=-2A ; V
CC
=-50V
I
B1
=-I
B2
=-4mA;R
L
=25Ω
0.7
t
stg
Storage time
1.3
μs
t
f
Turn-off time
1.5
μs
2
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