Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD1196
・DARLINGTON
・High
DC current gain
・High
current capacity and wide ASO
・Low
saturation voltage
APPLICATIONS
・Motor
drivers, printer
・Hammer
drivers
・Relay
drivers,
・Voltage
regulator control.
PINNING
PIN
1
2
3
Base
DESCRIPTION
2SB886
・
固电
Emitter
Collector;connected to
mounting base
导½
半
PARAMETER
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
IN
Collector-base voltage
Collector-emitter voltage
ES
ANG
CH
ND
ICO
EM
CONDITIONS
OR
UCT
VALUE
-110
-100
-6
-8
-12
UNIT
V
V
V
A
A
Open emitter
Open base
Open collector
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25℃
P
C
Collector dissipation
40
W
1.75
T
j
T
stg
Junction temperature
Storage temperature
150
-50~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
f
T
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
Transition frequency
CONDITIONS
I
C
=-50mA; R
BE
=∞
I
C
=-5mA; I
E
=0
I
C
=-4A; I
B
=-8mA
I
C
=-4A; I
B
=-8mA
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-4A ; V
CE
=-5V
I
C
=-4A ; V
CE
=-3V
1500
20
MIN
-100
-110
-1.0
TYP.
2SB886
MAX
UNIT
V
V
-1.5
-2.0
-0.1
-3.0
V
V
mA
mA
MHz
Switching times
t
on
t
stg
t
f
电半
固
Turn-on time
Storage time
Fall time
DC current gain
导½
IN
ES
ANG
CH
I
C
=-4A;I
B1
=-I
B2
=-8mA
R
L
=12.5Ω,Duty cycle≤1%
V
CC
=50V
ND
ICO
EM
OR
UCT
4000
0.7
1.4
1.5
μs
μs
μs
2
京公网安备 11010802033920号
EEWORLD
