SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD798
DESCRIPTION
·With TO-220 package
·High voltage
·DARLINGTON
APPLICATIONS
·With switching and igniter applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
MAX
600
300
5
6
1
30
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
CONDITIONS
I
C
=0.5A ;L=40mH
I
C
=4A ;I
B
=0.04A
I
C
=4A ;I
B
=0.04A
V
CB
=600V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=2V
I
C
=4A ; V
CE
=2V
f=1MHz;V
CB
=50V
1500
200
35
MIN
300
2SD798
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
TYP.
MAX
UNIT
V
2.0
2.5
0.5
0.5
V
V
mA
mA
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=0.04A
V
CC
@100V,R
L
=25B
1
8
5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD798
Fig.2 Outline dimensions
3
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