2SB686 datasheet, PDF - EEWORLD Datasheet

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2SB686: Descriptionsilicon pnp power transistors; File Size159KB，4 Pages; ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.; Websitehttp://www.jmnic.com/

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2SB686 Overview

silicon pnp power transistors

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB686

DESCRIPTION

・With

TO-3P(I) package

・Complement

to type 2SD716

APPLICATIONS

・Power

amplifier applications

・Recommend

for 30~35W high-fidelity

audio frequency amplifier output stage

PINNING

Emitter

Collector;connected to

mounting base

Base

Fig.1 simplified outline (TO-3P(I)) and symbol

DESCRIPTION

Absolute maximum ratings(Ta=25

℃)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

固电

导½

半

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

ANG

Open emitter

Open base

MIC

CONDITIONS

UCT

VALUE

-100

-5

-6

UNIT

℃

Open collector

Emitter current

Total power dissipation

Junction temperature

Storage temperature

=25℃

150

-55~150

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