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1N4150

Description
silicon epitaxial planar diodes
File Size23KB,1 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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1N4150 Overview

silicon epitaxial planar diodes

1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
Features
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
D IM E N S IO N S
D IM
A
B
C
D IM E N S IO N S
D IM
A
B
C
D
in c h e s
M in .
-
-
-
0 .6 3 0
M ax.
0 .11 4
0 .0 7 5
0 .0 1 7
-
M in .
-
-
-
1 6 .0
mm
M ax.
2 .9
1 .9
0 .4 2
-
N o te
D
in c h e s
M in .
-
-
-
1 .0 8 3
M ax.
0 .1 5 4
0 .0 7 5
0 .0 2 0
-
M in .
-
-
-
2 7 .5 0
mm
M ax.
3 .9
1 .9
0 .5 2
-
N o te
Electrical Characteristics
Type
Peak
reverse
voltage
V
RM
V
1N914
1N4149
1)
Max.
aver.
rectified
current
I
O
mA
75
150
200
150
150
150
2)
Max.
power
dissip.
at 25
P
tot
mW
500
500
500
400
400
500
500
500
400
400
400
400
Max.
junction
temper-
ature
T
j
200
200
200
175
175
200
200
200
175
175
175
175
Max. forward
voltage drop
Max. reverse
current
Max. reverse recovery time
V
F
V
1.0
1.0
1.0
0.55
0.55
1.0
1.0
1.0
0.54
0.50
0.55
1.0
at
I
F
mA
10
10
200
0.10
0.10
0.10
20
30
0.50
0.10
0.01
10
I
n
nA
25
25
100
50
50
100
25
25
50
50
50
100
at
V
R
V
20
20
50
30
50
25
20
20
30
30
20
50
t
rr
nS
Max. 4.0
Max. 4.0
Max. 4.0
Max. 2.0
Max. 2.0
Max. 2.0
Max. 4.0
Max. 4.0
Max. 4.0
Max. 10
-
Max. 4.0
Conditions
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
, to I
R
=1mA
, to I
R
=1mA
100
100
50
40
75
35
100
100
40
40
30
75
1N4150
1N4152
1N4153
1N4154
1N4447
1N4449
1)
1)
I
F
=I
R
=10 to 200 mA, to 0.1 I
F
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=I
R
=10mA, to I
R
=1mA
I
F
=I
R
=10mA, to I
R
=1mA
-
I
F
=I
R
=10mA, to I
R
=1mA
, to I
R
=1mA
, to I
R
=1mA
, to I
R
=1mA
, to I
R
=1mA
, to I
R
=1mA
150
150
150
150
150
150
1N4450
1N4451
1N4453
1N4454
Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34:
P
tot
=300mW
T
S
=-65 to +175
T
J
=175
R
tha
0.4K/mW
1

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