2SD1025 datasheet, PDF - EEWORLD Datasheet

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2SD1025: Descriptiondarlington transistor(8A npn); CategoryDiscrete semiconductor The transistor; File Size116KB，3 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

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2SD1025 Overview

darlington transistor(8A npn)

2SD1025 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	200 V
Configuration	DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	1500
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Humidity sensitivity level	2
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	NPN
Maximum power consumption environment	50 W
Maximum power dissipation(Abs)	50 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	CHOPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
Maximum off time (toff)	13000 ns
Maximum opening time (tons)	2000 ns
VCEsat-Max	1.5 V
Base Number Matches	1

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Product Specification

Silicon NPN Power Transistors

2SD1025

DESCRIPTION

・With

TO-220 package

・High

DC current gain

・DARLINGTON

PINNING

1

2

3

Base

Collector;connected to

mounting base

Emitter

DESCRIPTION

Absolute maximum ratings(Ta=25

℃)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

P

T

j

T

stg

PARAMETER

固电

IN

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current-Peak

Base current

Base current-Peak

ES

ANG

CH

T

C

=25℃

导½

半

CONDITIONS

Open emitter

Open base

Open collector

ON

MIC

E

OR

DUT

VALUE

200

7

8

12

0.5

1.0

50

150

-55~150

UNIT

V

A

W

℃

Total power dissipation

Junction temperature

Storage temperature

THERMAL CHARACTERISTICS

SYMBOL

R

Θ

j-C

PARAMETER

Thermal resistance junction to case

VALUE

2.5

UNIT

℃/W

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