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APT11GP60BDQB

Description
power mos 7 igbt
File Size204KB,7 Pages
ManufacturerAdvanced Power
Websitehttp://advancedpower.ch/
Download Datasheet View All

APT11GP60BDQB Overview

power mos 7 igbt

TYPICAL PERFORMANCE CURVES
APT11GP60BDQB
APT11GP60BDQB
600V
POWER MOS 7 IGBT
®
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
®
TO-247
G
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
• SSOA rated
C
E
C
G
E
All Ratings: T
C
= 25°C unless otherwise specified.
APT11GP60BDQB
UNIT
Volts
600
±20
41
20
45
45A @ 600V
187
-55 to 150
300
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 100°C
Pulsed Collector Current
1
Amps
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.2
2.1
250
µA
nA
3-2005
050-7447
Rev A
6
2.7
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 11A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 11A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
2
2
Volts
I
CES
I
GES
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
2500
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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