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HSK2474J

Description
N-channel mosfets
File Size52KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
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HSK2474J Overview

N-channel mosfets

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 1/5
HSK2474J
N - Channel MOSFETs
Description
Dynamic dv/dt Rating
Repetitive Avalanche rated
Surface Mount
Straigh Lead
Available in Tape&Reel
Fast Switching
Ease of Paralleling
Features
Low Drain-Source ON Resistance - R
DS(ON)
=1.2Ω(Typ.)@ V
DS
=10V, I
D
=1.3A
High Forward Transfer Admittance -|Yfs|=1.2S@V
DS
=50V, I
D
=1.3A
Low Leakage Current - I
DSS
=100uA (Max.)@V
DS
=200V
Enhancement-Mode - V
th
= 2.0~4.0V@V
DS
=4V, I
D
=250uA
Absolute Maximum Ratings
(Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
Maximum Voltages and Currents
Drain to Source Breakdown Voltage ................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source Voltage....................................................................................................
±
20 V
Drain Current (Cont.) ......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
Thermal Characteristics
Characteristic
Junction to Case
Junction to Ambient
Symbol
R
θJC
R
θJA
Max.
5
50
Units
°C/W
°C/W
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