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HTIP41C

Description
100V 6A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size43KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HTIP41C Overview

100V 6A NPN epitaxial planar transistor

Features

Product Name: 100V 6A NPN Epitaxial Planar Transistor


Product model: HTIP41C


Product Description:


The HTIP41C is designed for use in general purpose amplifier and low-speed switching applications.



parameter:


Type: PNP


BVCEO: 100V


IC: 6A


PD: 65W


hFE: MIN 15


hFE: Max. 75


VCE(sat): Max. 1.5V


RoHS: PF(lead-free)


Package: TO-220AB


HTIP41C Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6707
Issued Date : 1993.01.13
Revised Date : 2004.11.19
Page No. : 1/4
HTIP41C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP41C is designed for use in general purpose amplifier and switching
applications.
TO-220
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 65 W
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 2 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 100 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 100 V
I
C
Collector Current ................................................................................................................................................ 6 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
I
CES
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
f
T
Min.
100
100
-
-
-
-
-
30
15
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
400
700
1
1.5
2
-
75
-
MHZ
Unit
V
V
uA
uA
mA
V
V
I
C
=1mA, I
E
=0
I
C
=30mA, I
B
=0
V
CE
=100V, I
B
=0
V
CE
=60V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=6A, I
B
=600mA
I
C
=6A, V
CE
=4V
I
C
=0.3A, V
CE
=4V
I
C
=3A, V
CE
=4V
V
CE
=10V, I
C
=500mA, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of h
FE2
Rank
h
FE2
A
15-50
B
40-75
HTIP41C
HSMC Product Specification
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