M24L28256SA datasheet, PDF - EEWORLD Datasheet

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M24L28256SA: Description2-mbit (256k x 8) pseudo static ram; File Size239KB，12 Pages; ManufacturerElite

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M24L28256SA Overview

2-mbit (256k x 8) pseudo static ram

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ESMT

PSRAM

Features

•Advanced low-power architecture

•High speed: 55 ns, 70 ns

•Wide voltage range: 2.7V to 3.6V

•Typical active current: 1 mA @ f = 1 MHz

•Low standby power

•Automatic power-down when deselected

M24L28256SA

2-Mbit (256K x 8)

Pseudo Static RAM

the device is accomplished by asserting Chip Enable ( CE )

and Write Enable (

) inputs LOW .Data on the eight I/O

pins(I/O

through I/O

) is then written into the location

specified on the address pins (A

through A

Reading from the device is accomplished by asserting the

Chip Enable One ( CE ) and Output Enable ( OE ) inputs LOW

while forcing Write Enable (

) HIGH. Under these

conditions, the contents of the memory location specified by

the address pins will appear on the I/O pins.

The eight input/output pins (I/O

through I/O

) are placed in a

high-impedance state when the device is deselected ( CE

HIGH ), the outputs are disabled ( OE HIGH), or during write

operation ( CE LOW and

LOW). See the Truth Table

for a complete description of read and write modes.

Functional Description

The M24L28256SA is a high-performance CMOS pseudo

static RAM (PSRAM) organized as 256K words by 8 bits.

Easy memory expansion is provided by an active LOW Chip

Enable( CE ) and active LOW Output Enable ( OE ).This

device has an automatic power-down feature that reduces

power consumption dramatically when deselected. Writing to

Logic Block Diagram

Elite Semiconductor Memory Technology Inc.

Publication Date

Jul. 2008

Revision

1.1

1/12

M24L28256SA Related Products

	M24L28256SA	M24L28256SA-70BEG	M24L28256SA-55BIG	M24L28256SA-70BIG
Description	2-mbit (256k x 8) pseudo static ram	2-mbit (256k x 8) pseudo static ram	2-mbit (256k x 8) pseudo static ram	2-mbit (256k x 8) pseudo static ram

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