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VP0206N6

Description
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, PLASTIC, DIP-14
CategoryDiscrete semiconductor    The transistor   
File Size41KB,1 Pages
ManufacturerSupertex
Download Datasheet Parametric Compare View All

VP0206N6 Overview

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, PLASTIC, DIP-14

VP0206N6 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1577040035
Parts packaging codeDIP
package instructionIN-LINE, R-PDIP-T14
Contacts14
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.6 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)20 pF
JESD-30 codeR-PDIP-T14
JESD-609 codee0
Number of components4
Number of terminals14
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

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