APM2315A
P-Channel Enhancement Mode MOSFET
Features
•
-20V/-4A,
R
DS(ON)
=35mΩ (typ.) @ V
GS
=-4.5V
R
DS(ON)
=45mΩ (typ.) @ V
GS
=-2.5V
R
DS(ON)
=60mΩ (typ.) @ V
GS
=-1.8V
Pin Description
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of SOT-23
S
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
D
G
P-Channel MOSFET
Ordering and Marking Information
APM2315
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2315 A :
M15X
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
X - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Aug., 2005
1
www.anpec.com.tw
APM2315A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θ
JA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=-4.5V
Rating
-20
±12
-4
-16
-1.5
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2315A
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=-250µA
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±10V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-4A
-20
-1
-30
-0.5
-0.7
35
45
60
-0.75
-1
±100
55
72
100
-1.3
V
µA
V
nA
mΩ
V
R
DS(ON) a
Drain-Source On-state Resistance
V
SD a
Diode Forward Voltage
V
GS
=-2.5V, I
DS
=-2.5A
V
GS
=-1.8V, I
DS
=-2A
I
SD
=-0.5A, V
GS
=0V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain Charge
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-4A
12
2.1
2.9
16
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Aug., 2005
2
www.anpec.com.tw
APM2315A
Electrical Characteristics (Cont.)
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2315A
Min.
Typ.
Max.
Unit
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Notes:
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
8
1135
200
110
6
12
14
131
82
7
72
45
Ω
pF
V
DD
=-10V, R
L
=10Ω,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6Ω
ns
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Aug., 2005
3
www.anpec.com.tw
APM2315A
Typical Characteristics
Power Dissipation
1.0
0.9
0.8
0.7
5.0
4.5
4.0
Drain Current
-I
D
- Drain Current (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T
A
=25 C,V
G
=-4.5V
0
20
40
60
80 100 120 140 160
o
P
tot
- Power (W)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
0.0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
30
10
Rd
s(o
n)
Lim
it
Thermal Transient Impedance
2
1
Duty = 0.5
-I
D
- Drain Current (A)
300
µ
s
1ms
0.2
0.1
1
10ms
0.1
0.05
0.02
0.01
100ms
0.1
1s
DC
0.01
Single Pulse
Mounted on 1in pad
o
R
θ
JA
: 150 C/W
2
T =25 C
0.01
A
0.01
0.1
o
1
10
100
1E-3
1E-4 1E-3 0.01
0.1
1
10
100
-V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Aug., 2005
4
www.anpec.com.tw
APM2315A
Typical Characteristics (Cont.)
Output Characteristics
16
V
GS
= -3,-4,-5,-6,-7,-8,-9,-10V
14
12
-2V
140
160
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
120
100
80
60
40
20
0
-I
D
- Drain Current (A)
V
GS
= -1.8V
10
8
6
4
2
0
0.0
V
GS
= -2.5V
V
GS
= -4.5V
-1.5V
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
-V
DS
- Drain - Source Voltage (V)
-I
D
- Drain Current (A)
Transfer Characteristics
16
14
1.8
Gate Threshold Voltage
I
DS
= -250
µ
A
1.6
Normalized Threshold Voltage
12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
-I
D
- Drain Current (A)
10
8
6
4
T
j
=25 C
2
0
0.0
o
T
j
=125 C
o
o
T
j
=-55 C
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75 100 125 150
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Aug., 2005
5
www.anpec.com.tw
京公网安备 11010802033920号
EEWORLD
