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MMUN2132RLT1

Description
bias resistor transistor
CategoryDiscrete semiconductor    The transistor   
File Size263KB,7 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

MMUN2132RLT1 Overview

bias resistor transistor

MMUN2132RLT1 Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)15
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis-
tor with a monolithic bias network consisting of two resistors; a series base resistor and a
base-emitter resistor.The BRT eliminates these individual components by integrating them
into a single device. The use of a BRT can reduce both system cost and board space. The
device is housed in the SOT-23 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
PNP SILICON
BIAS RESISTOR
TRANSISTOR
PIN1
base
(Input)
R1
R2
PIN3
Collector
(output)
1
PIN2
Emitter
(Ground)
2
3
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 25°C
(1)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
200
1.6
Value
625
–65 to +150
260
10
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Unit
°C/W
°C
°C
Sec
R2 (K)
10
22
47
47
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
θ
JA
T
J
, T
stg
T
L
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
Marking
A6A
A6B
A6C
R1 (K)
10
22
47
MMUN2114LT1
A6D
10
MMUN2115LT1
(2)
A6E
10
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
8
Q1–1/7

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