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GSS6900S

Description
dual N-channel mosfet with schottky diode
File Size554KB,8 Pages
ManufacturerGTM
Websitehttp://www.gtm.com.tw/
Download Datasheet View All

GSS6900S Overview

dual N-channel mosfet with schottky diode

Pb Free Plating Product
ISSUED DATE :2006/04/28
REVISED DATE :
GSS6900S
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
*Simple Drive Requirement
*DC-DC Converter Suitable
*Fast Switching Performance
Description
CH1 BV
DSS
30V
N-CH
R
DS(ON)
30m
N-CH
I
D
5.7A
CH2 BV
DSS
30V
N-CH
R
DS(ON)
22m
N-CH
I
D
9.8A
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0.40
0.19
6.20
5.00
4.00
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
CH-1
CH-2
Unit
V
V
A
A
A
W
W/ :
:
30
±20
5.7
4.6
20
1.4
0.01
30
±20
9.8
7.8
30
3.1
0.02
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Thermal Resistance Junction-ambient
3
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a(CH-1)
Rthj-a(CH-2)
Rthj-a(
Schottky
)
Value
Typ.
70
42
52
Max.
90
40
60
Unit
: /W
: /W
: /W
GSS4816S
Page: 1/8
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