BR1000 - BR1010
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
BR10
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
AC
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
0.75 (19.1)
Min.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Ta = 25
°C
Ta = 100
°C
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010
UNIT
V
V
V
A
A
A
2
S
V
µA
µA
°C/W
°C
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
10
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
600
420
600
800
560
800
1000
700
1000
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
12
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
10
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
250
8
200
T
J
= 50
°C
6
150
4
100
2
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x8.2cm x 0.3cm ) Al.-PLATE
0
25
50
75
100
125
150
175
50
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
0
1
2
4
6
10
20
40
60 100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
Pulse W idth = 300
µs
1 % Duty Cycle
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
T
J
= 100
°C
FORWARD CURRENT, AMPERES
10
1.0
1.0
0.1
T
J
= 25
°C
T
J
= 25
°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
Microcontroller MCU
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