LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
MMUN2211LT1 Series
MMUN2211LT1
SERIES
3
1
2
CASE 318, STYLE 6
SOT–23 (TO–236AB)
•
Simplifies Circuit Design
•
Reduces Board Space and Component Count
•
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
•
Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 25°C
(Note 1.) Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
PIN 3
PIN 1
BASE
(INPUT)
R
1
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
R
2
MARKINGDIAGRAM
A6x
M
A6x = Device Marking
x
M
= A – L(See Page 2)
= Date Code
ORDERING INFORMATION
Device
Package
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
Marking
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
A8M
A8R
A8U
R1(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
R2(K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
∞
∞
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
MMUN2211S-1/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
THERMAL CHARACTERISTICS
Rating
Thermal Resistance – Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
R
θJA
T
J
, T
stg
T
L
Value
625
–65 to +150
260
10
Unit
°C/W
°C
°C
Sec
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
50
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
4.0
0.1
–
–
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 2.), (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 2.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
160
160
–
60
100
140
140
350
350
5.0
15
30
200
150
140
350
350
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Vdc
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MMUN2230LT1/MMUN2231LT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2235LT1/MMUN2238LT1
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
V
CE(sat)
MMUN2211S–2/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 3.)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
Ω)
V
OL
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2213LT1
MMUN2241LT1
V
OH
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
–
Vdc
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
Ω)
(V
CC
= 5.0 V, V
B
= 5.0 V, R
L
= 1.0 k
Ω)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
Ω)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
Ω
)
MMUN2230LT1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
Ω
)
MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
MMUN2238LT1
Input Resistor
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
MMUN2211LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1/MMUN2238LT1
MMUN2241LT1
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
1.54
70
0.8
0.17
–
–
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
1.0
0.21
–
–
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
2.88
130
1.2
0.25
–
–
1.2
0.185
0.56
0.056
kΩ
Resistor Ratio
R
1
/R
2
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
MMUN2211S–3/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
PD, POWER DISSIPATION (MILLIWATTS)
250
1
IC/IB = 10
TA = –25°C
25°C
75°C
200
0.1
150
100
R
θJA
= 625°C/W
0.01
50
0
–50
0
50
100
150
0.001
0
20
40
60
80
TA, AMBIENT TEMPERATURE (5°C)
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
hFE, DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V
TA = 75°C
25°C
–25°C
100
Cob, CAPACITANCE (pF)
3
4
Figure 2. VCE(sat) vs. IC
f = 1 MHz
lE = 0 A
TA = 25°C
2
1
10
1
10
IC, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
75°C
Vin, INPUT VOLTAGE (VOLTS)
10
TA = –25°C
10
Figure 4. Output Capcitance
25°C
VO = 0.2 V
TA = –25°C
25°C
75°C
1
1
0.1
0.01
VO = 5 V
0
1
2
3
4
5
6
7
8
9
10
0.001
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
MMUN2211S–4/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
1
IC/IB = 10
TA = –25°C
25°C
hFE, DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V
TA = 75°C
0.1
75°C
25°C
100
–25°C
0.01
–
0.001
0
20
60
40
IC, COLLECTOR CURRENT (mA)
80
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) vs. IC
4
Cob, CAPACITANCE (pF)
f = 1 MHz
lE = 0 A
TA = 25°C
IC, COLLECTOR CURRENT (mA)
100
Figure 8. DC Current Gain
75°C
25°C
TA = –25°C
3
10
1
2
0.1
1
0.01
VO = 5 V
0
2
4
6
8
10
Vin, INPUT VOLTAGE (VOLTS)
0
0
10
20
30
40
50
0.001
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
100
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
Figure 10. Output Current vs. Input Voltage
TA = –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
MMUN2211S–5/11
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