LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diodes
CATHODE
ANODE
3
1
2
CATHODE
3
MMBD2835LT1
MMBD2836LT1
1
MAXIMUM RATINGS
Rating
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
Forward Current
I
F
Symbol
V
R
Value
35
75
100
Unit
Vdc
mAdc
CASE
2
318–08, STYLE 12
SOT– 23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θ
JA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θ
JA
P
D
DEVICE MARKING
MMBD2835LT1 = A3X;MMBD2836LT1=A2X
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)( EACH DIODE )
Characteristic
Symbol
V
(BR)
I
R
MMBD2835LT1
MMBD2836LT1
C
T
V
F
—
—
—
—
—
—
—
100
100
4.0
1.0
1.0
1.2
4.0
pF
Vdc
Min
35
75
Max
—
—
nAdc
Unit
Vdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
R
= 100
µ
Adc) MMBD2835LT1
MMBD2836LT1
Reverse Voltage Leakage Current
(V
R
= 30 Vdc)
(V
R
= 50 Vdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 100 mAdc)
Reverse Recovery Time(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
t
rr
ns
G20–1/2
LESHAN RADIO COMPANY, LTD.
MMBD2835LT1 MMBD2836LT1
+10 V
820
Ω
2.0 k
0.1µF
t
r
t
p
10%
t
I
F
t
rr
t
100
µH
I
F
0.1
µF
50
Ω
OUTPUT
PULSE
GENERATOR
DUT
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
90%
i
R(REC)
= 1.0 mA
INPUT SIGNAL
V
R
I
R
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
100
10
I
F
, FORWARD CURRENT (mA)
T
A
= 85°C
10
I
R
, REVERSE CURRENT (
µA)
T
A
=150°C
T
A
=125°C
1.0
T
A
= –40°C
T
A
=85°C
0.1
T
A
= 25°C
1.0
T
A
=55°C
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0
10
T
A
=25°C
20
30
40
50
V
F
, FORWARD VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.75
C
D
, DIODE CAPACITANCE (pF)
1.50
1.25
1.00
0.75
0
2.0
4.0
6.0
8.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
G20–2/2
Embedded System
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