TRANSISTOR MODULE
SQD300AA100
UL;E76102 M
SQD300AA100
is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
I
C
300A, V
CEX
1000V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Moter Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Mounting M6
Terminal M6
Terminal M4
A.C.1minute
Recommended Value 2.5 3.9 25 40
Recommended Value 2.5 3.9 25 40
Recommended Value 1.0 1.4 10 14
Typical Value
T
C
25
40
V
BE
2V
Conditions
Ratings
SQD300AA100
1000
1000
7
300
300
16
2000
150
40
125
2500
4.7 48
4.7 48
1.5 15
520
Tj 25
Unit
V
V
V
A
A
A
W
V
N m
( f
B)
g
Tj 25
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEX SUS
h
FE
V
CE
V
BE
sat
sat
Item
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
V
CB
1000V
V
EB
7V
Ic 60A I
B2
Conditions
Ratings
Min.
Max.
2.0
800
Unit
mA
mA
V
12A
1000
75
100
2.5
3.5
3.0
15.0
3.0
1.8
0.063
0.3
Ic 300A V
CE
2.8V
Ic 300A V
CE
5V
Ic 300A I
B
6A
Ic 300A I
B
6A
Vcc 600V Ic 300A
6A
I
B1
6A I
B2
Ic
300A
Transistor part
Diode part
V
V
s
V
/W
ton
ts
tf
V
ECO
Rth j-c
47
TRANSISTOR MODULE
SQD300AA120
UL;E76102 M
SQD300AA120
is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
I
C
300A, V
CEX
1200V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Moter Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
M6
Terminal M6
Terminal M4
A.C.1minute
Recommended Value 2.5 3.9 25 40
Recommended Value 2.5 3.9 25 40
Recommended Value 1.0 1.4 10 14
Typical Value
T
C
25
40
V
BE
2V
Conditions
Ratings
SQD300AA120
1200
1200
10
300
300
16
2000
150
40
125
2500
4.7 48
4.7 48
1.5 15
470
Tj 25
Unit
V
V
V
A
A
A
W
V
N m
( f
B)
g
Tj 25
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEX SUS
h
FE
V
CE
V
BE
sat
sat
Item
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
V
CB
1200V
V
EB
10V
Ic 60A I
B2
Conditions
Ratings
Min.
Max.
4.0
1200
Unit
mA
mA
V
12A
1200
75
3.0
3.5
3.0
15.0
3.0
1.8
0.063
0.3
Ic 300A V
CE
5V
Ic 300A I
B
6A
Ic 300A I
B
6A
Vcc 600V Ic 300A
6A
I
B1
6A I
B2
Ic
300A
Transistor part
Dioe part
V
V
s
V
/W
ton
ts
tf
V
ECO
Rth j-c
49
Embedded System
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