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STB12NK80Z-S

Description
N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size214KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

STB12NK80Z-S Overview

N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET

STB12NK80Z-S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)400 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)10.5 A
Maximum drain current (ID)10.5 A
Maximum drain-source on-resistance0.75 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)190 W
Maximum pulsed drain current (IDM)42 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
STB12NK80Z-S
N-CHANNEL 800V - 0.65Ω - 10.5A I
2
SPAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
STB12NK80Z-S
s
s
s
s
s
s
V
DSS
800 V
R
DS(on)
< 0.75
I
D
10.5 A
Pw
190 W
TYPICAL R
DS
(on) = 0.65
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
12
I
2
SPAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
IDEAL FOR HIGH DENSITY LOW PROFILE
ADAPTERS
ORDERING INFORMATION
SALES TYPE
STB12NK80Z-S
MARKING
B12NK80Z
PACKAGE
I
2
SPAK
PACKAGING
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