PGE 608 21
EDFA Gain Block
for DWDM Applications
Key Features
• Full C-band EDFA (1530-1563 nm)
• +20 dBm output power using 3 pumps
• Single pumped preamp available
• Mid-stage access available
• Dual-sourced footprint and pinning
• Low noise figure, typical 5 dB
• Optical monitor output
• Small size (125x150x13 mm)
Applications
• Used as a C-band pre-, line- or
booster amplifier EDFA in DWDM
networks.
Description
The PGE 608 21 C-band EDFA family are 40-channel optical amplifiers
intended to be used as pre-, line- or booster amplifiers in DWDM networks.
It is designed for 1 to 3 pump laser configurations and is based on a dual-
sourced platform.The gain block has input and output power monitoring. The
input and output ports have isolators to attenuate spurious reflections in the
system.
External electronic circutry is needed for biasing the pump laser and for
controlling the pump laser temperature. Heat sink is provided via the bottom
surface.
1
PGE 608 21
Optical
input
signal
Input
power
monitor
Optical
gain
Output
power
monitor
Optical
output
signal
40 pin
electrical
interface
Optical
output power
monitor
Figure 1. Block diagram
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
Description
Common 1, 1480 nm pump 2: Laser anode, pump
monitor cathode & thermistor
Laser cathode 1480 nm pump 2
Pump monitor anode, 1480 nm pump 2
Thermistor, 1480 nm pump 2
TEC pos, 1480 nm pump 2
TEC neg, 1480 nm pump 2
Thermistor, PCB
Thermistor, PCB
Common 2, 980 nm pump: Laser anode, pump
monitor cathode & thermistor
Laser cathode, 980 nm pump
Pump monitor anode, 980 nm pump
Thermistor, 980 nm pump
TEC pos, 980 nm pump
TEC neg, 980 nm pump
SCL EEPROM
SDA EEPROM
GND
GND
NC (Spare monitor 1 cathode)
NC (Spare monitor 1 anode)
Input monitor cathode
Input monitor anode
NC
NC
NC
NC
NC (Spare monitor 2 cathode)
NC (Spare monitor 2 anode)
Output monitor cathode
Output monitor anode
GND
GND
EEPROM +5 V
EEPROM 0 V
Common 3, 1480 nm pump 1: Laser anode, pump
monitor cathode & thermistor
Laser cathode 1480 nm pump 1
Pump monitor anode, 1480 nm pump 1
Thermistor, 1480 nm pump 1
TEC pos, 1480 nm pump 1
TEC neg, 1480 nm pump 1
Figure 2. Mechanical Outline Drawing and Pin Connection
2
PGE 608 21
Optical Characteristics
Electrical and optical characteristics at recommended operating conditions, unless otherwise noted.
04
= single pump,
05
= double pump,
06
= triple pump
Parameter
Conditions
Symbol
04
05
06
Operating Wavelength
λ
L
–––––1530-1562––––
Measurement Wavelength
λ
M
–––––––1550–––––––
Input Power
P
IL
-9.5
-6
-6
Output Power, min
@ P
IL
and
λ
M
P
Out
14
17
20
Noise Figure, max
@ P
IL
and
λ
L
NF
6.0
6.0
6.0
Gain
@ P
IL
and
λ
L
G
OPT
17
23
26
Gain Flatness, max
@ P
IL
and
λ
L
(Note 1)
G
Flat
±0.8
±0.8
±0.8
Note 1. G
FLAT
=(G
MAX
-G
MIN
)/2, where G
MAX
is the maximum gain for
λ
L
and GMIN is the minimum gain for
λ
L
.
The gain is measured as dynamic gain under constant saturation.
Unit
nm
nm
dBm
dBm
dB
dB
dB
Electrical Characteristics
Parameter
Conditions
Symbol
Operating Current, max
Operating Voltage, max
Power Dissipation, max
Thermistor Resistance
TEC Current, max
TEC Voltage, max
@
∆T=50
K
@
∆T=50
K
I
Drive
VF
P
E
R
Th
I
TEC
V
TEC
04
300
05
300+720
06
Unit
300+720x2
mA
2.4
3.5
9.5
1.1
2.6
2.5
10.6
10
1.1+1.5
2.6+3.8
2.5
17.7
10.5
1.1+1.5x2
2.6+3.8x2
V
W
kΩ
A
V
Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating Case Temperature
T
Case
-5
70
°C
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Storage Temperature
Drive Current
T
stg
I
LD_MAX
-40
300/800
75
°C
mA
CAUTION:
Stresses outside those listed in ”Absolute Maximum Ratings” may cause permanent damage to the device.
3
PGE 608 21
Handling Precautions
This device may be damaged as a result of electrostatic
discharge (ESD). Take proper precautions during both han-
dling and testing. This typically includes grounded wrist
wraps, workbenches and floor mats in ESD controlled areas.
Semiconductor devices may be damaged by current surges,
use appropriate transient protection.
Quality Assurance
Ericsson Microelectronics commitment to quality has been
proven through a decade of semiconductor device produc-
tion and has been confirmed to ISO 9001. Opto product
qualification is made according to the intention of applicable
Telcordia standards.
Connector Options
SC/SPC
(Other connectors available on request)
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
WAVELENGTH 1300 nm - 1600 nm
CLASS 3B LASER
Information given in this data sheet is believed to be accurate and
reliable. However no responsibility is assumed for the consequences of
its use nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Ericsson
Microelectronics. These products are sold only according to Ericsson
Microelectronics' general conditions of sale, unless otherwise
confirmed in writing.
Product specifications subject to change without
notice.
Ericsson Microelectronics AB
SE-164 81 Kista, Sweden
Telephone: +46 8 757 50 00
www.ericsson.com/microelectronics
For local sales contacts, please refer to our website
or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76
1522-PGE 608 21 Rev. D
© Ericsson Microelectronics AB, October 2000
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