ZXMP7A17G
70V P-channel enhancement mode MOSFET
Summary
V
DSS
=70V : R
DS(on)
=0.16
I
D
=3.7A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
D
G
S
Applications
•
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
Class D audio output stages
Ordering information
Device
ZXMP7A17GTA
ZXMP7A17GTC
Reel size
(inches)
7
13
Tape width
(mm)
12
12
Quantity per reel
1,000
4,000
Device marking
ZXMP
7A17
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXMP7A17G
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
@ V
GS
=10V; T
A
=25°C
(b)
@ V
GS
=10V; T
A
=25°C
(b)
@ V
GS
=10V; T
A
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Operating and storage temperature range
I
DM
I
S
I
SM
P
D
Symbol
V
DSS
V
GS
I
D
Limit
-70
20
-3.7
-2.9
-2.6
-9.6
-4.8
-9.6
2
16
3.9
31
-55 to +150
A
A
A
W
mW/°C
W
mW/°C
°C
Unit
V
V
A
P
D
T
j
, T
stg
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Symbol
R
JA
R
JA
Limit
62.5
32
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10 s - pulse width limited by maximum junction
temperature.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXMP7A17G
Characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXMP7A17G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate-body leakage
V
(BR)DSS
I
DSS
I
GSS
-1.0
0.16
0.25
4.4
S
R
DS(on)
-70
-1
100
V
A
nA
V
I
D
= -250 A, V
GS
=0V
V
DS
= -70V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= -250 A, V
DS
=V
GS
V
GS
= -10V, I
D
= -2.1A
V
GS
= -4.5V, I
D
= -1.7A
V
DS
= -15V, I
D
= -2.1A
Symbol
Min.
Typ.
Max.
Unit
Conditions
Gate-source threshold voltage V
GS(th)
Static drain-source on-state
resistance
(*)
Forward transconductance
(*)(‡)
g
fs
Dynamic
(‡)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
(†) (‡)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
(*)
Reverse recovery time
(‡)
Reverse recovery charge
(‡)
V
SD
t
rr
Q
rr
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
635
52
42.5
pF
pF
pF
V
DS
= -40V, V
GS
=0V
f=1MHz
2.5
3.4
27.9
8
9.6
18
1.77
3.66
-0.85
29.8
38.5
-0.95
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
V
DS
= -35V, V
GS
= -10V
I
D
= -2.1A
V
DS
= -35V, V
GS
= -5V
I
D
= -2.1A
V
DD
= -35V, I
D
= -1A
R
G
≅6.0
, V
GS
= -10V
T
j
=25°C, I
S
= -2.0A,
V
GS
=0V
T
j
=25°C, I
S
= -2.1A,
di/dt=100A/ s
NOTES:
300 s; duty cycle
2%.
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXMP7A17G
Typical characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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