Philips Semiconductors
Product specification
General purpose diode
FEATURES
•
Hermetically sealed leaded glass
SOD27 (DO-35) package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 2 A.
The diode is type branded.
handbook, halfpage
k
BAX18
DESCRIPTION
The BAX18 is a general purpose diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
a
MAM246
APPLICATIONS
•
Rectifier applications.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t = 10 ms
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
55
15
9
450
+200
200
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
MIN.
−
−
−
−
MAX.
75
75
500
2000
V
V
mA
mA
UNIT
1996 Sep 18
2
Philips Semiconductors
Product specification
General purpose diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 300 mA
I
F
= 2 A; T
j
= 150
°C
I
R
reverse current
see Fig.5
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA; see Fig.7
−
−
−
−
5
100
35
50
−
−
1.0
1.5
CONDITIONS
MIN.
MAX.
BAX18
UNIT
V
V
µA
µA
pF
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
375
UNIT
K/W
K/W
1996 Sep 18
3
Philips Semiconductors
Product specification
General purpose diode
GRAPHICAL DATA
MBG455
BAX18
handbook, halfpage
500
IF
(mA)
400
handbook, halfpage
3
MBG467
IF
(A)
(1) (2)
(3)
(4)
2
300
200
1
100
0
0
100
Tamb
(
o
C)
200
0
0
(1) T
j
= 175
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 150
°C;
maximum values.
(4) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG702
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 18
4
Philips Semiconductors
Product specification
General purpose diode
BAX18
10
4
handbook, full pagewidth
MBG697
IR
(µA)
10
3
10
2
10
1
10
−1
10
−2
0
100
Tj (oC)
200
V
R
= 75 V.
Solid line; maximum values. Dotted line; typical values.
Fig.5 Reverse current as a function of junction temperature.
MGD003
handbook, halfpage
40
Cd
(pF)
30
20
10
0
0
10
20
VR (V)
30
f = 1 MHz; T
j
= 25
°C.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 18
5
MCU
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