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PTB 20004
50 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20004 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 50 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
50 Watts, 860–900 MHz
Class AB Characteristics
50% Collector Efficiency at 50 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
Output Power (Watts)
50
40
30
20
10
0
0
2
4
6
8
10
200
04
LOT
CO
DE
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
Input Power (Watts)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
10.0
175
1.0
–40 to +150
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20004
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 100 mA
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
3.5
20
Typ
30
70
5
50
Max
—
—
—
100
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 25 Vdc, Pout = 50 W, I
CQ
= 200 mA, f = 900 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 50 W, I
CQ
= 200 mA, f = 900 MHz)
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 50 W(PEP), I
CQ
= 200 mA,
f
1
= 899 MHz, f
2
= 900 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 50 W, I
CQ
= 200 mA
f = 900 MHz—all phase angles at frequency of test)
Symbol
G
pe
η
C
IMD
Min
8.0
50
—
Typ
9.5
—
-21
Max
—
—
—
Units
dB
%
dBc
Ψ
—
—
10:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 50 W, I
CQ
= 200 mA)
Z Source
Z Load
Frequency
MHz
860
880
900
R
7.1
6.9
6.7
Z Source
jX
-1.7
-1.2
-0.6
R
5.0
5.1
5.2
Z Load
jX
-3.5
-3.9
-4.5
2
e
Typical Performance
Gain & Efficiency vs. Frequency
12
11
PTB 20004
(as measured in a broadband circuit)
Gain (dB)
80
70
60
10
9
8
7
6
840
Efficiency (%)
50
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 50 W
855
870
885
900
40
30
20
915
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20004 Uen Rev. D 09-28-98
3
Efficiency (%)
Gain (dB)
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