AP9985M
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Fast Switching Speed
▼
Surface Mount Package
D
D
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
G
40V
15mΩ
10A
I
D
SO-8
S
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
± 20
10
8
48
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
200120031
AP9985M
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.032
Max. Units
-
-
15
25
3
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=10A
V
DS
=40V, V
GS
=0V
V
DS
=32V ,V
GS
=0V
V
GS
= ± 20V
I
D
=10A
V
DS
=20V
V
GS
=4.5V
V
DS
=20V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=20Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
-
35
-
-
-
14.7
7.1
6.8
11.5
6.3
28.2
12.6
1725
235
145
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.3V
T
j
=25℃, I
S
=2.3A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
2.3
25
1.3
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
AP9985M
50
45
T
C
=25
o
C
40
10V
6.0V
5.0V
4.5V
T
C
=150
o
C
10V
6.0V
5.0V
4.5V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
30
30
V
GS
=4.0V
20
V
GS
=4.0V
15
10
0
0
1
2
3
4
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2
I
D
=10A
T
C
=25
℃
60
I
D
=10A
V
GS
=10V
40
Normalized R
DS(ON)
2
4
6
8
10
12
1.4
R
DS(ON)
(m
Ω
)
0.8
20
0
0.2
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP9985M
12
3
10
I
D
, Drain Current (A)
8
2
6
4
P
D
(W)
1
0
2
0
25
50
75
100
125
150
0
50
100
150
T
c
, Case Temperature ( C)
o
T
c ,
Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
100us
Normalized Thermal Response (R
thja
)
10
Duty Factor = 0.5
0.2
1ms
I
D
(A)
0.1
0.1
0.05
10ms
1
0.02
0.01
100ms
1s
0.1
P
DM
0.01
Single Pulse
t
T
10s
T
C
=25
o
C
Single Pulse
0.01
0.1
1
10
100
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9985M
12
f=1.0MHz
10000
I
D
=10A
V
GS
, Gate to Source Voltage (V)
9
Ciss
V
DS
=12V
V
DS
=16V
V
DS
=20V
1000
6
C (pF)
Coss
Crss
100
3
0
0
5
10
15
20
25
10
1
7
13
19
25
31
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3.5
3
10
2.5
V
GS(th)
(V)
Tj=150
o
C
Tj=25
o
C
I
S
(A)
1
2
1.5
0.1
1
0.01
0
0.4
0.8
1.2
0.5
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C )
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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