IC62VV1008L
IC62VV1008LL
1M x 8 1.8V ULTRA LOW POWER
CMOS STATIC RAM
FEATURES
• Access times of 70, 100 ns
• CMOS Low power operation:
I
CC
=10mA (typical)* operation
I
SB2
=3
µA
(typical)* standby
• Low data retention voltage: 1.2V (min.)
• Output Enable (OE) and Two Chip Enables
(CE1, CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Fully static operation:
—
No clock or refresh reguired
• Single 1.65V-2.2V power supply
• Wafer level burn in test mode
• Available in the know good die form and
48-pin 8*10mm TF-BGA
* Typical values are measured at V
CC
=1.8V, T
A
=25°C
Preliminary
DESCRIPTION
The
ICSI
IC62VV1008L and IC62VV1008LL is a low voltage,
1,048,576 words by 8 bits, CMOS SRAM. It is fabricated using
ICSI
's low voltage, six transistor (6T), CMOS technology. The
device is targeted to satisfy the demands of the state-of-the-art
technologies such as cell phones and pagers.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down with CMOS input levels. Additionally, easy
memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE)
controls both writing and reading of the memory.
The IC62VV1008L and IC62VV1008LL are available in know
good die form and 48-pin 8*10mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1024K x 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
CONTROL
CIRCUIT
2
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L
IC62VV1008LL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
CC
T
BIAS
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
–0.5 to Vcc +0.4
–0.3 to +2.4
–40 to +85
–65 to +150
1
Unit
V
V
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE
(1)(2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
o
C, f = 1 MHz, V
CC
= 3.0 V
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(2)
Input Leakage
Output Leakage
Test Conditions
V
CC
= Min., I
OH
= –0.1 mA
V
CC
= Min., I
OL
= 0.1 mA
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
V
CC
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
Notes:
1. V
IH(max.)
= V
CC
+2.0V for pulse width less than 10 ns.
1. V
IL(min.)
= –2.0V for pulse width less than 10 ns.
4
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L
IC62VV1008LL
IC62VV1008L POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-70
Symbol Parameter
I
CC
1
I
CC
2
Vcc Dynamic Operating
Supply Current
Vcc Dynamic Operating
Supply Current
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= 1.8V, CE1 = V
IL
,CE2=V
IH
I
OUT
= 0 mA, f = f
MAX
V
CC
= 1.8V
CE1
= V
IL
, CE2 = V
IH
,
I
OUT
= 0 mA, f = 1
MHZ
V
CC
= Max., f = 0
CE1
≥
V
CC
– 0.2V
or CE2
≤
0.2V,
V
IN
≥
V
CC
– 0.2V, V
IN
≤
0.2V
Com.
Ind.
Com.
Ind.
Com.
Ind.
Min.
—
—
—
—
—
—
-100
Max. Min.
Max.
15
20
—
—
12
15
2.5
2.5
35
50
Unit
mA
mA
2.5 —
2.5 —
35
50
—
—
I
SB
2
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IC62VV1008LL POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-70
Symbol Parameter
I
CC
1
I
CC
2
V
CC
Dynamic Operating
Supply Current
V
CC
Dynamic Operating
Supply Current
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= 1.8V,
CE1
= V
IL
, CE2=V
IH
I
OUT
= 0 mA, f = f
MAX
V
CC
= 1.8V
CE1
= V
IL
, CE2=V
IH
f = 1
MHZ
V
CC
= Max., f = 0
CE1
≥
V
CC
– 0.2V
or CE2
≤
0.2V,
V
IN
≥
V
CC
– 0.2V, V
IN
≤
0.2V
Com.
Ind.
Com.
Ind.
Com.
Ind.
Min.
—
—
—
—
—
—
Max. Min.
15
20
—
—
-100
Max. Unit
12
15
2.5
2.5
15
25
mA
mA
2.5 —
2.5 —
15
25
—
—
I
SB
2
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
5
京公网安备 11010802033920号
EEWORLD
