AP40P03GI
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Lower On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-30V
28mΩ
-30A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±20
-30
-18
-120
31.3
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
4
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200407062-1/4
AP40P03GI
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
-
-
-
21
-
-
-
15
3
10
10
48
31
66
910
300
210
11
Max. Units
-
-
28
50
-3
-
-1
-25
±100
24
-
-
-
-
-
-
1460
-
-
17
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-18A
V
GS
=-4.5V, I
D
=-10A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-18A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
= ±20V
I
D
=-18A
V
DS
=-25V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-18A
R
G
=3.3Ω,V
GS
=-10V
R
D
=0.8Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=-18A, V
GS
=0V
I
S
=-18A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
30
25
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40P03GI
120
100
-10V
100
-10V
T
A
=150
o
C
80
T
A
= 25
o
C
-7.0V
-I
D
, Drain Current (A)
-7.0V
-I
D
, Drain Current (A)
80
60
60
-5.0V
-4.5V
-5.0V
40
40
-4.5V
20
V
G
= -3.0 V
20
V
G
= -3.0 V
0
0
2
4
6
8
0
2
4
6
8
0
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
58
1.6
48
I
D
= -10 A
T
C
=25
℃
Normalized R
DS(ON)
1.4
I
D
=- 18 A
V
G
=-10V
R
DS(ON)
(m
Ω
)
1.2
38
1.0
28
0.8
18
0.6
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
18
15
2.0
12
Normalized -V
GS(th)
(V)
-I
S
(A)
1.5
9
T
j
=150
o
C
T
j
=25
o
C
1.0
6
0.5
3
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP40P03GI
f=1.0MHz
12
10000
-V
GS
, Gate to Source Voltage (V)
V
DS
=- 25 V
I
D
=-1 8 A
9
C (pF)
6
1000
C
iss
3
C
oss
C
rss
0
100
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
0.1
-I
D
(A)
100us
10
0.1
0.05
1ms
T
c
=25 C
Single Pulse
o
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
10ms
100ms
1s
DC
10
100
0.01
1
0.1
1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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