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MTN3K14N3

Description
30v N-channel enhancement mode mosfet
File Size583KB,7 Pages
ManufacturerCystech
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MTN3K14N3 Overview

30v N-channel enhancement mode mosfet

CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C427N3
Issued Date : 2008.05.16
Revised Date :
Page No. : 1/7
MTN3K14N3
Features
V
DS
=30V
R
DS(ON)
=39m
Ω
@V
GS
=10V, I
D
=2A
R
DS(ON)
=57m
Ω
@V
GS
=4.5V, I
D
=2A
Low on-resistance
High speed : ton=24ns(typ.), toff=19ns(typ.)
Pb-free package
Equivalent Circuit
MTN3K14N3
Outline
SOT-23
D
G:Gate
S:Source
D:Drain
S
G
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
th, j-a
Tj, Tstg
Limits
30
±20
4
(Note 1)
8
(Note 2 & 3)
1.38
0.01
90
(Note 1)
-55 ~ +150
Unit
V
V
A
A
W
W/°C
°C/W
°C
Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
2. Pulse width limited by maximum junction temperature
3. Pulse width≤300μs, duty cycle≤2%
MTN3K14N3
CYStek Product Specification

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MTN3K14N3
Description 30v N-channel enhancement mode mosfet
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