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SHD226412R

Description
hermetic power mosfet N-channel
CategoryDiscrete semiconductor    The transistor   
File Size57KB,3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

SHD226412R Overview

hermetic power mosfet N-channel

SHD226412R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
Parts packaging codeTO-257AA
package instructionFLANGE MOUNT, S-XSFM-P3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)33 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeS-XSFM-P3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)99 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 370, REV. A
SHD226412
SHD226412R
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: 100 VOLT, 33 AMP, 0.06 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT T
A
= 25•C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
OP
/T
STG
R
JC
P
D
¡
V
GS
=10V, T
C
= 25•C
V
GS
=10V, T
C
= 100•C
PULSED DRAIN CURRENT
@ T
C
= 25•C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25•C
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
–20
33
20
99
+150
0.80
150
UNITS
Volts
Amps
Amps(pk)
•C
•C/W
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
I
D
= 16.5A, V
GS
= 10V@T
J
= 25•C
FORWARD TRANSCONDUCTANCE
V
DS
= 80Vdc, I
DS
= 16.5A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 100Vdc, V
GS
= 0Vdc
V
DS
= 100Vdc
V
GS
= 0Vdc, T
J
= 125•C
GATE TO BODY LEAKAGE CURRENT
V
GS
=
–20Vdc,
V
DS
= 0Vdc
TOTAL GATE CHARGE
(V
GS
= 10 Vdc,
GATE TO SOURCE CHARGE
V
DS
= 80Vdc,
GATE TO DRAIN CHARGE
I
D
= 33Adc)
TURN ON DELAY TIME
(V
DD
= 50V,
RISE TIME
I
D
= 33Adc,
TURN OFF DELAY TIME
V
GS
= 10 Vdc,
FALL TIME
R
G
= 9.1W)
FORWARD VOLTAGE,
(I
S
= 33Adc, V
GS
= 0V)
(I
S
= 33Adc, V
GS
= 0Vdc, T
J
= 125•C)
REVERSE RECOVERY TIME
(I
S
= 33Adc, V
GS
= 0Vdc
REVERSE RECOVERY CHARGE
di/dt = 100A/msec)
INPUT CAPACITANCE
(V
DS
= 25 Vdc,
OUTPUT CAPACITANCE
V
GS
= 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
BV
DSS
R
DS(ON)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(ON)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
100
-
8.0
-
-
-
-
-
-
0.06
-
10
100
+100
-100
110
40
330
100
170
2.0
144
.93
2500
1200
1100
Volts
W
S(1/W)
mA
-
-
52
12
32
18
164
48
83
1.0
0.98
-
1830
678
559
nA
nC
nsec
-
-
-
-
Volts
nsec
mC
pF
 
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-mail Address - sales@sensitron.com
 
 
 
 
 
 
 
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