CYStech Electronics Corp.
Low V
CE(SAT)
PNP Epitaxial Planar Transistor
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 1/4
BTA1300A3
Description
The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier
applications.
•
High DC current gain and excellent hFE linearity.
HFE(1)=140—600(VCE=-1V,IC=-0.5A)
HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A)
•
Low Saturation Voltage
VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA).
Features
Symbol
BTA1300A3
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(
Note 1)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
-20
-20
-10
-6
-2
-5
750
150
-55~+150
Unit
V
V
V
V
A
mW
°C
°C
Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%.
BTA1300A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-20
-10
-6
-
-
-
-
140
60
-
-
Typ.
-
-
-
-
-
-
-
-
120
140
50
Max.
-
-
-
-0.1
-0.1
-0.5
-1.5
600
-
-
-
Unit
V
V
V
uA
uA
V
V
-
MHz
pF
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 2/4
Test Conditions
IC=-50uA
IC=-10mA
IE=-1mA
VCB=-20V
VEB=-6V
IC=-2A, IB=-50mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-500mA
VCE=-1V, IC=-4A
VCE=-1V, IE=500mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
Range
Y
140~280
GR
200~400
BL
300~600
BTA1300A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=1V
Saturation Voltage---(mV)
Current Gain---
HFE
100
1000
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
VCE(SAT)@IC=40IB
10
100
1
10
100
1000
10000
Collector Current---IC(mA)
1
1
10
100
1000
10000
Collector Current---IC(mA)
ON Voltage vs Collector Current
1000
Power Dissipation---PD(mW)
800
700
600
500
400
300
200
100
0
0.1
1
10
100
1000
10000
0
Power Derating Curve
ON Voltage---(mV)
VBE(ON)@VCE=1V
100
Collector Current IC---(mA)
50
100
150
200
Ambient Temperature---TA(℃)
BTA1300A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 4/4
A
B
1
2
3
α
2
Marking:
A1300
α
3
C
D
H
I
E
F
G
α
1
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*
0.1000
-
-
*
0.0500
-
*
5°
-
*
2°
-
*
2°
Millimeters
Min.
Max.
0.36
0.56
*
2.54
-
-
*
1.27
-
*
5°
-
*
2°
-
*
2°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1300A3
CYStek Product Specification
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