CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C817N3
Issued Date : 2003.06.17
Revised D
ate:2004.07.01
Page:1/4
BTB1424LN3
Features
•
Low V
CE(sat)
, typically -0.3 V at I
C
/ I
B
= -2A / -0.2A
•
Excellent current gain characteristics
•
Complementary to BTD2150LN3
Symbol
BTB1424LN3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limit
-40
-30
-5
-3
-7
(Note)
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTB1424LN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
-40
-30
-5
-
-
-
-
52
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C817N3
Issued Date : 2003.06.17
Revised D
ate:2004.07.01
Page:2/4
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-2V, I
C
=-20mA
V
CE
=-2V, I
C
=-1A
V
CE
=-5V, I
C
=-0.1A, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
Q
100~200
P
160~320
E
250~500
BTB1424LN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000
10000
Spec. No. : C817N3
Issued Date : 2003.06.17
Revised D
ate:2004.07.01
Page:3/4
S
aturation Voltage vs Collector current
Current gain---HFE
VCE=5V
100
VCE=2V
S
aturation Voltage---(mV)
VCESAT
1000
100
IC=40IB
VCE=1V
10
IC=10IB
IC=20IB
10
1
10
100
1000
10000
1
1
10
100
1000
10000
Collector current---IC(mA)
Collector current---IC(mA)
Power Derating Curve
250
Power Dissipation---PD(mW)
S
aturation Voltage vs Collector current
10000
VBE(SAT )@
IC=10IB
S
aturation Voltage---(mV)
200
150
100
50
0
1000
100
1
10
100
1000
10000
Collector current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃)
BTB1424LN3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A
L
3
B
1
2
S
Spec. No. : C817N3
Issued Date : 2003.06.17
Revised D
ate:2004.07.01
Page:4/4
Marking:
TE
AE
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1424LN3
CYStek Product Specification
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