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BTA1952E3

Description
low vcesat pnp epitaxial planar transistor
File Size146KB,4 Pages
ManufacturerCystech
Download Datasheet View All

BTA1952E3 Overview

low vcesat pnp epitaxial planar transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 1/4
BTA1952E3
Features
Low V
CE
(sat), V
CE
(sat)=-0.5 V (typical), at I
C
/ I
B
= -3A / -0.15A
Excellent DC current gain characteristics
Wide SOA
Symbol
BTA1952E3
Outline
TO-220AB
B:Base
C:Collector
E:Emitter
BCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
I
B
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-100
-80
-5
-5
-8
-1
2
40
150
-55~+150
Unit
V
V
V
*1
A
A
W
°C
°C
BTA1952E3
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