CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C851N3
Issued Date : 2004.02.27
Revised Date : 2004.07.01
Page No. : 1/4
BTB1386LN3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.6 V (typical), at I
C
/ I
B
= -4A / -0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTD2098LN3
Symbol
BTB1386LN3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note :
1. Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(Pulse)
P
D
R
θJA
Tj
Tstg
Limits
-20
-15
-6
-5
-10
(Note )
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTB1386LN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
f
T
Cob
Min.
-20
-15
-6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
120
60
Max.
-
-
-
-0.5
-0.5
-1.0
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Spec. No. : C851N3
Issued Date : 2004.02.27
Revised Date : 2004.07.01
Page No. : 2/4
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-15V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-4A, I
B
=-0.1A
V
CE
=-2V, I
C
=-0.5A
V
CE
=-6V, I
C
=-50mA, f=30MHz
V
CB
=-20V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
Rank
Range
Q
120~270
R
180~390
S
270~560
BTB1386LN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Spec. No. : C851N3
Issued Date : 2004.02.27
Revised Date : 2004.07.01
Page No. : 3/4
Saturation Voltage vs Collector Current
10000
VCE(SAT)
Saturation Voltage---(mV)
1000
IC=100IB
IC=60IB
Current Gain---HFE
100
VCE=2V
100
VCE=1V
10
IC=30IB
IC=10IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Power Dissipation---PD(mW)
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
Power Derating Curve
250
200
150
100
50
0
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient Temperature---TA(℃)
200
BTB1386LN3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A
L
3
B
1
2
S
Spec. No. : C851N3
Issued Date : 2004.02.27
Revised Date : 2004.07.01
Page No. : 4/4
Marking:
TE
BH
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1386LN3
CYStek Product Specification
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