CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 1/4
BTB1182J3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.7 V (typical), at I
C
/ I
B
= -2A / -0.5A
•
Excellent current gain characteristics
•
Complementary to BTD1758J3
Symbol
BTB1182J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note
:
Single Pulse , Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
-40
-30
-5
-2
-5
(Note)
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
BTB1182J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
f
T
Cob
Min.
-40
-30
-5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
100
50
Max.
-
-
-
-1
-1
-1
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-3A, I
B
=-0.1A
V
CE
=-3V, I
C
=-0.5A
V
CE
=-5V, I
C
=-0.1A, f=100MHz
V
CB
=-10V, f =1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
Range
P
82~180
Q
120~270
R
180~390
S
270~560
BTB1182J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
10000
VCE(SAT)
@
IC=40IB
VCE=6V
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
VCE=3V
VCE=1V
IC=20IB
IC=40IB
100
IC=10IB
10
1
10
100
1000
10000
10
1
Collector Current---IC(mA)
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
VCE(SAT )@
IC=10IB
12
10
8
6
4
2
0
Power Derating Curve
Saturation Voltage---(mV)
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
Power Dissipation---PD(W)
0
50
100
150
200
Case Temperature---TC(℃)
BTB1182J3
CYStek Product Specification
CYStech Electronics Corp.
TO-252 Dimension
A
C
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 4/4
Marking:
B
L
F
G
D
B1182
3
H
E
K
2
I
1
J
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.40
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
-
*0.0906
-
0.0354
-
0.0315
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
-
*2.30
-
0.90
-
0.80
5.20
5.50
1.40
1.60
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1182J3
CYStek Product Specification
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