For bidirectional use C or CA suffix for types 1.5KE6.8 thru types 1.5KE440A (e.g. 1.5KE6.8C, 1.5KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNITS
Peak pulse power dissipation with a 10/1000µs
waveform
(NOTE 1, Fig. 1)
Peak pulse current with a 10/1000µs waveform
(NOTE 1)
P
PPM
I
PPM
P
M(AV)
Minimum 1500
SEE TABLE 1
Watts
Amps
Watts
Steady state power dissipation at T
L
=75°C
lead lengths, 0.375" (9.5mm)
(NOTE 2)
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
unidirectional only
(NOTE 3)
Maximum instantaneous forward voltage at 100A for
unidirectional only
(NOTE 4)
Operating junction and storage temperature range
6.5
I
FSM
200
Amps
V
F
T
J
, T
STG
3.5/5.0
-55 to +175
Volts
°C
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave duty cycle=4 pulses per minute maximum
(4) V
F
=3.5V for devices of V
(BR)
≤220V
and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
1/21/99
ELECTRICAL CHARACTERISTICS at (T
A
=25°C unless otherwise noted) TABLE 1
Breakdown Voltage
V
(BR)
(Volts)
(NOTE 1)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
Maximum
Reverse
Leakage
at V
WM
I
D (NOTE 4)
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Peak Pulse
Current I
PPM
(NOTE 2)
JEDEC
TYPE
NUMBER
1N6267
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N6272
1N6272A
1N6273
1N6273A
1N6274
1N6274A
1N6275
1N6275A
1N6276
1N6276A
1N6277
1N6277A
1N6278
1N6278A
1N6279
1N6279A
1N6280
1N6280A
1N6281
1N6281A
1N6282
1N6282A
1N6283
1N6283A
1N6284
1N6284A
1N6285
1N6285A
1N6286
1N6286A
1N6287
1N6287A
1N6288
1N6288A
1N6289
1N6289A
1N6290
1N6290A
1N6291
General
Semiconductor
PART
NUMBER
+1.5KE6.8
+1.5KE6.8A
+1.5KE7.5
+1.5KE7.5A
+1.5KE8.2
+1.5KE8.2A
+1.5KE9.1
+1.5KE9.1A
+1.5KE10
+1.5KE10A
+1.5KE11
+1.5KE11A
+1.5KE12
+1.5KE12A
+1.5KE13
+1.5KE13A
+1.5KE15
+1.5KE15A
+1.5KE16
+1.5KE16A
+1.5KE18
+1.5KE18A
+1.5KE20
+1.5KE20A
+1.5KE22
+1.5KE22A
+1.5KE24
+1.5KE24A
+1.5KE27
+1.5KE27A
+1.5KE30
+1.5KE30A
+1.5KE33
+1.5KE33A
+1.5KE36
+1.5KE36A
+1.5KE39
+1.5KE39A
+1.5KE43
+1.5KE43A
+1.5KE47
+1.5KE47A
1.5KE51
1.5KE51A
1.5KE56
1.5KE56A
1.5KE62
1.5KE62A
1.5KE68
Test
Current
at
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(Volts)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
Amps
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
Maximum
Clamping
Voltage at I
PPM
Vc
(Volts)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
Maximum
Temperature
Coefficient of V
(BR)
(% / °C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
ELECTRICAL CHARACTERISTICS at (T
A
=25 C unless otherwise noted) TABLE 1 (Cont’d)
Breakdown Voltage
V
(BR)
(Volts)
(NOTE 1)
Min
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
Max
71.4
82.5
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
Maximum
Reverse
Leakage
at V
WM
I
D (NOTE 4)
(µA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Peak Pulse
Current I
PPM
(NOTE 2)
JEDEC
TYPE
NUMBER
1N6291A
1N6292
1N6292A
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
General
Semiconductor
PART
NUMBER
1.5KE68A
1.5KE75
1.5KE75A
1.5KE82
1.5KE82A
1.5KE91
1.5KE91A
1.5KE100
1.5KE100A
1.5KE110
1.5KE 110A
1.5KE120
1.5KE120A
1.5KE130
1.5KE130A
1.5KE150
1.5KE150A
1.5KE160
1.5KE160A
1.5KE170
1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
Test
Current
at
(mA) I
T
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(Volts)
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Amps
16.3
13.9
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage at I
PPM
Vc
(Volts)
92.0
109
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temperature
Coefficient of V
(BR)
(% / °C)
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
NOTES:
(1) V
(BR)
measured after I
T
applied for 300µs, I
T
=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with V
R
10 volts and less the I
D
limit is doubled
* Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274
(1.5KE200CA, 1.5KE220CA)
+ UL listed for Telecom applications protection, 497B, file number E136766 for both uni-directional and bi-directional devices
APPLICATION
This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components.
The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60).
This Transient Voltage Suppressor diode has a pulse power rating of 1500 watts for one millisecond. The response time of TVS diode clamping action is effectively instan-
taneous (1 x 10
-9
seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components.
TVS diodes can also be used in series or parallel to increase the peak power ratings.
RATINGS AND CHARACTERISTIC CURVES 1.5KE6.8 THRU 1.5KE440CA
FIG. 1 - PEAK PULSE POWER RATING CURVE
FIG. 2 - PULSE DERATING CURVE
100
P
PPM
, PEAK PULSE POWER, kW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T
A
=25°C
100
PEAK PULSE POWER (P
PP
) or CURRENT (I
PP
)
DERATING IN PERCENTAGE, %
10
75
50
1.0
25
0.1
0.1
µ
s
1.0
µ
s
10
µ
s
100
µ
s
1.0ms
10ms
td, PULSE WIDTH, sec.
0
0
25
50
75
100
125 150
175 200
T
A
, AMBIENT TEMPERATURE, °C
FIG. 3 - PULSE WAVEFORM
150
I
PPM,
PEAK PULSE CURRENT, %
tr=10µsec.
PEAK VALUE
I
PPM
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% of I
PP
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
10,000
UNIDIRECTIONAL
BIDIRECTIONAL
C
J
, CAPACITANCE , pF
100
HALF VALUE - I
PP
2
1,000
V
R
=0
50
10/1000µsec. WAVEFORM
as DEFINED by R.E.A.
100
f=1 MHz
Vsig=50mV
P-P
T
J
=25°C
V
R
=RATED
STAND-OFF
VOLTAGE
td
10
0
5
10
100
V
(BR)
, BREAKDOWN VOLTAGE, VOLTS
500
0
1.0
2.0
t, TIME,ms
3.0
4.0
FIG. 5 - STEADY STATE POWER DERATING CURVE
PM
(AV),
STEADY STATE POWER DISSIPATION,
WATTS
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
150
175
200
1.6 x 1.6 x 0.040"
(40 x 40 x 1mm.)
COPPER HEAT SINKS
FIG. 6 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT UNI-DIRECTIONAL ONLY
PEAK FORWARD SURGE CURRENT,
AMPERES
60 H
Z
RESISTIVE OR
INDUCTIVE LOAD
200
L
= 0.375” (9.5mm)
LEAD LENGTHS
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T
J
=T
J
max.
100
10
1
10
NUMBER OF CYCLES AT 60 H
Z
100
T
L,
LEAD TEMPERATURE,°C
RATINGS AND CHARACTERISTIC CURVES 1.5KE6.8 THRU 1.5KE440CA
Python Machine Learning Applications : https://training.eeworld.com.cn/course/4447This course is aimed at all types of programming learners. It explains the current popular machine learning related te...
The AD of the development board is not connected, so I can only find another development board to test the AD. Zhou Ligong's 8962 development board has an AD connection, which is just right for testin...
Speaking of laser radar and millimeter-wave radar, I believe that people in the industry are not unfamiliar with them. Laser radar is a radar system that emits laser beams to detect the position, spee...
Comparison of the competitiveness of ZigBee solutions of major ZigBee chip suppliers The main ZigBee chip providers (2.4GHZ) on the market are: TI/CHIPCON, EMBER (ST), JENNIC (Jie Li), FREESCALE, and ...
introduction
Since the beginning of the 21st century, the world of information has changed rapidly. Maybe a high-tech product will be released today and a better similar product will be releas...[Details]
In
circuit design,
current
measurement
is widely used, and the main fields are divided into three categories: in measurement,
the electric meter
is used to measure the curre...[Details]
1 Introduction
A wide variety of communication cables and control cables are widely used in various instruments and control equipment. Whether the cable is well-conducted and
whether
th...[Details]
Google's driverless technology is not only an eye-catching technology, but also a subversion of the car usage model.
Those who have watched anti-terrorism films and TV dramas must have been im...[Details]
Analog engineers have traditionally struggled with complexity when designing power supplies that required multiple outputs, dynamic load sharing, hot-swap, or extensive fault-handling capabilities....[Details]
The reason for the light decay of white LEDs: the decline of phosphor performance
So far, the rapid decline of the luminous performance of white light LEDs, especially low-power white light LE...[Details]
introduction
For the voltage regulator modules (VRMs) that power the latest computer central processing units (CPUs), power supply designers have historically used multiphase interleaved b...[Details]
1 Introduction
As an emerging microfabrication technology, micro-electromechanical system (MEMS) technology has begun to be applied in various fields. It can integrate functions such as inform...[Details]
Overview
As a remote network communication control method with advanced technology, high reliability, complete functions and reasonable cost, CAN-bus has been widely used in various automa...[Details]
MediaTek (2454) announced the acquisition of F-MStar (3697) and attracted the attention of IC design industry. This morning, Gartner Semiconductor Industry Research Director Hong Cenwei analyzed ...[Details]
Flooded Batteries
This battery developed in Germany can be used to power flashlights, strobe lights and toys as long as it is filled with water. This battery can be stored for 50 years and can...[Details]
Introduction
Liquid crystal, as a display device, is widely used in low-power products such as instruments, meters, and electronic equipment with its unique advantages. In the past, the displ...[Details]
1. Overview
At present, an information revolution is in the ascendant around the world, led by microelectronics, computers and communication technologies, and centered on information technolog...[Details]
This article will introduce a design method for a distributed control system used in a tracking car, which can perform distributed control of motor modules, sensor modules, and lighting control mod...[Details]
1 Introduction
With the improvement of people's quality of life, lamps are no longer just basic indoor lighting tools, but also a kind of practical art for architectural decoration. When ther...[Details]
DIY/Open Source Hardware
京公网安备 11010802033920号
EEWORLD
