BLY93C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLY93C
is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
FEATURES:
•
Common Emitter
•
P
G
= 9.0 dB at 25 W/175 MHz
•
Omnigold™
Metalization System
E
B
C
D
E
H I
C
E
Ø.125 NOM.
FULL R
J
.125
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
3.0 A
65 V
35 V
4.0 V
70 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.5 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
F
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.004 / 0.10
.085 / 2.16
.160 / 4.06
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.240 / 6.10
.255 / 6.48
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
C
OB
G
P
f
T
I
C
= 50 mA
I
C
= 10 mA
I
E
= 10 mA
V
CE
= 36 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
V
CB
= 28 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
65
4.0
4.0
UNITS
V
V
V
mA
---
pF
I
C
= 1.25 A
f = 1.0 MHz
f = 175 MHz
I
E
= 200 mA
f = 100 MHz
10
45
9.0
625
100
---
dB
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change witout notice.
REV. A
1/1
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