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1N4150

Description
high speed silicon switching diode
CategoryDiscrete semiconductor    diode   
File Size328KB,10 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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1N4150 Overview

high speed silicon switching diode

1N4150 Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
package instructionO-LALF-W2
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current0.3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.006 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

1N4150 Related Products

1N4150
Description high speed silicon switching diode
Maker Transys Electronics Limited
package instruction O-LALF-W2
Reach Compliance Code unknown
Shell connection ISOLATED
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
JEDEC-95 code DO-35
JESD-30 code O-LALF-W2
Number of components 1
Number of terminals 2
Maximum operating temperature 200 °C
Minimum operating temperature -65 °C
Maximum output current 0.3 A
Package body material GLASS
Package shape ROUND
Package form LONG FORM
Maximum power dissipation 0.5 W
Maximum repetitive peak reverse voltage 50 V
Maximum reverse recovery time 0.006 µs
surface mount NO
Terminal form WIRE
Terminal location AXIAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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