high speed silicon switching diode
| Parameter Name | Attribute value |
| Maker | Transys Electronics Limited |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 0.3 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.5 W |
| Maximum repetitive peak reverse voltage | 50 V |
| Maximum reverse recovery time | 0.006 µs |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| 1N4150 | |
|---|---|
| Description | high speed silicon switching diode |
| Maker | Transys Electronics Limited |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 0.3 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.5 W |
| Maximum repetitive peak reverse voltage | 50 V |
| Maximum reverse recovery time | 0.006 µs |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |