Transys
Electronics
L I M I T E D
TO-220 Plastic Package
BUX84, BUX84A
BUX84, 84A
NPN PLASTIC POWER TRANSISTORS
High Voltage, High Speed Power Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
3
B
H
F
C
E
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
M IN.
14.42
9.63
3.56
M A X.
N
L
O
1 2 3
D
G
J
M
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DE G 7
A
O
ABSOLUTE MAXIMUM RATINGS
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 0.3A; I
B
= 30 mA
D.C. current gain
I
C
= 0.1 A; V
CE
= 5 V
V
CES
V
CEO
I
C
P
tot
T
j
V
CEsat
h
FE
84
max. 800
max. 400
max.
max.
max.
max. 1.5
min.
30
84A
800 V
400 V
2.0
A
40
W
150
°C
0.8 V
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
V
CES
V
CEO
V
EBO
84
max. 800
max. 400
max.
84A
800 V
400 V
5.0
V
All dim insions in m m .
K
BUX84, BUX84A
Collector current
Collector current (Peak value)
Base current
Total power dissipation up to T
C
= 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
V
BE
= 0; V
CE
= Rated V
CES
V
BE
= 0; V
CE
= Rated V
CES
; T
C
= 125°C
Emitter cut-off current
I
C
= 0; V
EB
= 5V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; V
BE
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 0.3 A; I
B
= 30 mA
I
C
= 1 A; I
B
= 0.2 A
D.C. current gain
I
C
= 0.1 A; V
CE
= 5 V
Transition frequency f = 1 MHz
I
C
= 0.2 A; V
CE
= 10 V
Switching time
I
C
= 1A; V
CC
= 250V
I
B
= 0.2A; –I
B
= 0.4A
Turn on time
Storage time
Fall time
I
C
I
CM
I
B
P
tot
T
j
T
stg
R
th j–c
max.
max.
max.
max.
max.
2.0
3.0
0.75
40
150
–65 to +150
3.125
A
A
A
W
ºC
ºC
°C/W
=
84
I
CES
I
CES
I
EBO
max.
max.
max.
0.2
1.5
1.0
400
800
5.0
84A
mA
mA
mA
V
V
V
0.8 V
1.0 V
V
V
CEO(sus)
* min.
V
CES
min.
V
EBO
min.
V
CEsat
*
V
CEsat
*
V
BEsat
*
h
FE
*
f
T
max. 1.5
max. 3.0
max.
min.
typ.
1.1
30
20
MHz
t
on
t
s
t
f
max
max.
max.
0.5
3.5
1.4
µs
µs
µs
* Pulsed: pulse duration = 300 µs; duty cycle
≤
2%.
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