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TA0012: Descriptionnew high power, high efficiency hbt gsm power amplifier; File Size74KB，4 Pages; ManufacturerRF Micro Devices (Qorvo)

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new high power, high efficiency hbt gsm power amplifier

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TA0012

RF2123: New High Power, High Efficiency HBT GSM Power Amplifier

RF Micro Devices introduces a new power amplifier for

GSM applications based on revolutionary HBT (Het-

erojunction Bipolar Transistor) technology. This power

amplifier operates from a single 4.8V or 6V power sup-

ply without the need for a negative voltage. The power

output at 4.8V is 35dBm, and at 6V the PA provides

36dBm! The overall efficiency is as high as 62 percent.

On-board power control is included, as is power down.

The part is packaged in an industry standard 16-lead

SOIC with 4 fused, wide leads.

efficiency is extremely important. Sixty percent total

efficiency for a two-stage, 30dB gain GSM power

amplifier IC is ideal for maximizing talk time – a key

performance advantage at the competitive system

level.

•

Small Package Size. As cellular phone sizes shrink,

the available real estate for RF components shrinks

as well. Traditional power amplifier designs become

difficult to implement in the required area; thus the

SOIC packaged, integrated amplifier approach is

extremely beneficial. The RF2123 takes the place of

a large discrete implementation, or a MESFET IC

implementation with additional components such as

a negative voltage generator and a supply-side

switch. The unique “Quad BatWing” package pio-

neered by RF Micro Devices allows superior heat-

sinking and electrical grounding. This allows over 4-

W of output power to be transmitted in GSM mode

with no special heat slug or non-standard packag-

ing.

No Negative Voltage. HBT is a unique technology,

allowing performance better than GaAs MESFETs,

yet allowing biasing similar to Silicon Bipolar from a

single positive voltage. This eliminates one of the

primary disadvantages with GaAs MESFETs – the

requirement for a negative voltage. For a system

de-signer to implement negative voltage with suffi-

cient current to drive a MESFET gate, some kind of

switching regulator or “charge pump” must be used.

This can be expensive and cumbersome. If the

charge pump is implemented on-chip, excessive

low-frequency noise, additional leakage current,

and additional external components minimize the

benefit.

HBT provides an elegant solution to the high-effi-

ciency power amplifier. With no need for additional

components, the part provides an overall smaller,

more efficient, and lower cost solution.

No supply-side switch. The RF2123 HBT Power

Amplifier provides a single pin for power down. This

function powers down the part with less than 0.5V

on the control pin, and provides full power with 4V

on the control. In power-down mode, less than 1mA

of total current is consumed, allowing very long

stand-by times for the phone.

With the maturation of digital cellular systems in

Europe, Japan, and North America, next generation

handsets must offer advantages to the consumer.

These generally take the form of lower cost, smaller

size, and longer battery life.

One component which has traditionally been either

expensive, large, power-hungry, or any combination of

these has been the RF power amplifier. This critical

component governs much of the battery life, size, ease

of implementation, and manufacturability of the phone.

For 5-cell applications between 5.3V and 6.0V, this

function can now be performed using HBT (Hetero-

junction Bipolar Transistor) technology from RF Micro

Devices. The new RF2123 GSM power amplifier pro-

vides all of these advantages to the handset designer,

amplifying a +6dBm input signal to over +35dBm out-

put, at up to 60 percent efficiency. Moreover, no nega-

tive voltage is required, either internal or externally

generated. Additionally, an on-board analog gain con-

trol provides greater than 60dB of power control from

1V to 4V control voltage. When the control is reduced

to <0.5V, the part is shut off, drawing less than 1mA.

•

TECHNICAL NOTES

AND ARTICLES

•

The HBT Power Amplifier drives several key features of

the phone operation and design. Some are advantages

to the end customer, such as talk time and overall

phone size. Others are related to the ease of design

and manufacturing the phone, such as single voltage

supply, on-board power-down, and on-board power

control. These advantages are discussed below:

•

Talk time. The current consumption of the transmit-

ter is dominated by the power amplifier. For battery

operated applications, the power-added (or total)

•

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