Ordering number : EN8628
2SK3099LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK3099LS
Features
•
•
•
•
General-Purpose Switching Device
Applications
Low ON-resistance.
Low Qg.
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
400
±30
9
36
2.0
35
150
--55 to +150
92.6
9
Unit
V
V
A
A
W
W
°C
°C
mJ
A
*1 VDD=50V, L=2mH, IAV=9A
*2 L≤2mH, single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Conditions
ID=1mA, VGS=0V
VDS=320V, VGS=0V
VGS=
±30V,
VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=15V
Ratings
min
400
1.0
±100
3.0
2.9
5.8
0.43
0.55
4.0
typ
max
Unit
V
mA
nA
V
S
Ω
Marking : K3099
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806QB SY IM TC-00000315 No.8628-1/3
2SK3099LS
ASO
µ
s
Allowable Power Dissipation, PD -- W
7
5
3
2
IDP=36A
<10µs
10
10
0
µ
2.5
PD -- Ta
Drain Current, ID -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
ID=9A
s
2.0
1m
s
10
ms
DC
100
op
ms
era
tio
n
1.5
Operation in this
area is limited by RDS(on).
1.0
0.5
Tc=25°C
Single pulse
2
3
5
7 10
2
3
5
7 100
2
3
5
7
0
0
20
40
60
80
100
120
140
160
IT11684
120
1.0
Drain-to-Source Voltage, VDS -- V
40
Ambient Temperature, Ta --
°C
IT11682
PD -- Tc
EAS -- Ta
Allowable Power Dissipation, PD -- W
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Case Temperature, Tc --
°C
IT11685
Ambient Temperature, Ta --
°C
Note on usage : Since the 2SK3099LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No.8628-3/3
Microcontroller MCU
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