Ordering number:ENN6408
P-Channel Silicon MOSFET
2SJ578
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm
2062A
[2SJ578]
4.5
1.6
1.5
0.5
3
1.5
2
3.0
0.75
1
1.0
0.4
2.5
4.25max
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Conditions
Ratings
–60
±20
–1
–4
1.3
3.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Mounted on a ceramic board (250mm
2
×
0.8mm)
Tc=25˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=–1mA, VGS=0
VDS=–60V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–0.5A
ID=–0.5A, VGS=–10V
ID=–0.3A, VGS=–4V
–1.0
0.6
0.9
980
1300
1300
1800
Conditions
Ratings
min
–60
–10
±10
–2.4
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2314 No.6408–1/4
2SJ578
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–1A
VDS=–10V, VGS=–10V, ID=–1A
VDS=–10V, VGS=–10V, ID=–1A
IS=–1A, VGS=0
Conditions
Ratings
min
typ
75
22
7
6
4
21
14
3.7
0.6
0.5
–0.86
–1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Marking : JP
Switching Time Test Circuit
VDD=--30V
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
ID=--0.5A
RL=60Ω
D
VOUT
G
P.G
50Ω
2SJ578
S
--1.0
ID -- VDS
--5.0V
--2.0
ID -- VGS
25
°
Tc=
--
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--1.8
--1.6
C
VDS=--10V
--0.8
--8.0V
--6.0V
V
0.0
Drain Current, I
D
– A
Drain Current, I
D
– A
--0.6
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
--0.4
--1
--3.0V
--0.2
VGS=--2.5V
0
0
0
--0.2
--0.4 --0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
--4.0
--4.5
Drain-to-Source Voltage, V
DS
– V
2500
IT01155
2500
Gate-to-Source Voltage, V
GS
– V
75
°
IT01156
.0V
--4
V
.5
--3
--1.4
RDS(on) -- VGS
Tc=25°C
Static Drain-to-Source
On-State Resistance, R
DS (on)
– mΩ
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, R
DS (on)
– mΩ
2000
--0.5A
2000
1500
1500
0.3
=--
ID
A,
--
S=
VG
4V
ID=--0.3A
1000
1000
.5A
=--0
ID
,
V
--10
S=
VG
500
500
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
0
--60
--40
--20
0
20
40
60
80
100
120
C
140 160
IT01158
Gate-to-Source Voltage, V
GS
– V
IT01157
Case Temperature, Tc – ˚C
No.6408–2/4
25
°
C
2SJ578
3
y
fs -- ID
VDS=--10V
Forward Transfer Admittance, | yfs | – S
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
--0.001 2
--10
7
5
3
2
--1.0
7
5
3
2
IF -- VSD
VGS = 0
5
--2
c=
T
°
C
75
°
C
25
°
C
Forward Current, I
F
– A
Tc=
75
°
C
25
°
C
--0.4
--0.6
3
2
3
5 7--0.01
2 3
5 7 --0.1
2
3
5 7 --1.0 2 3
IT01159
--0.01
--0.2
--25
°
C
--0.8
--0.1
7
5
--1.0
--1.2
IT01160
Drain Current, I
D
– A
Diode Forward Voltage, VSD – V
1000
7
5
3
2
100
7
SW Time -- ID
VDD=--30V
VGS=--10V
Ciss, Coss, Crss – pF
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time – ns
5
3
2
td(off)
tf
td(on)
tr
100
7
5
3
2
10
7
5
3
2
1.0
Ciss
10
7
5
3
2
Coss
Crss
1.0
7
--0.1
2
3
5
7
Drain Current, I
D
– A
--1.0
2
3
0
--10
--20
--30
--40
--50
--60
IT01162
IT01161
--10
7
5
3
2
Drain-to-Source Voltage, V
DS
– V
--10
--9
VGS -- Qg
VDS=--10V
ID=--1A
Drain Current, I
D
– A
ASO
IDP=--4A
10µs
10
0
µ
1m
s
10
s
m
s
10
0m
s
era
tio
n
Gate-to-Source Voltage, V
GS
– V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
--1.0
7
5
3
2
--0.1
7
5
3
2
ID=--1A
DC
op
Operation in
this area is
limited by RDS(on).
Total Gate Charge, Qg – nC
1.4
--0.01
--0.1
Tc=25°C
Single pulse
2
3
5
7 --1.0
2
3
5 7 --10
2
3
5
7 --100
IT01163
4.0
Drain-to-Source Voltage, V
DS
– V
IT01164
PD -- Ta
Allowable Power Dissipation, P
D
– W
PD -- Tc
Allowable Power Dissipation, P
D
– W
1.3
1.2
M
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
ou
nt
1.0
ed
on
0.8
ac
er
am
ic
bo
0.6
ar
d
(2
5
0m
0.4
m
2
×
0
.
8m
m
0.2
0
0
20
40
60
80
100
120
)
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
IT01166
Case Temperature, Tc – ˚C
IT01165
No.6408–3/4
2SJ578
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6408–4/4
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