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2SJ579

Description
Power Field-Effect Transistor, 1.2A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SJ579 Overview

Power Field-Effect Transistor, 1.2A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN

2SJ579 Parametric

Parameter NameAttribute value
Objectid1544142489
package instructionPCP, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)1.2 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.5 W
Maximum pulsed drain current (IDM)4.8 A
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Ordering number:ENN6384
P-Channel Silicon MOSFET
2SJ579
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm
2062A
[2SJ579]
4.5
1.6
1.5
0.5
3
1.5
2
3.0
0.75
1
1.0
0.4
2.5
4.25max
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Conditions
Ratings
–60
±20
–1.2
–4.8
1.5
3.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Mounted on a ceramic board (250mm
2
×
0.8mm)
Tc=25˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=–1mA, VGS=0
VDS=–60V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–0.6A
ID=–0.6A, VGS=–10V
ID=–0.4mA, VGS=–4V
–1.0
0.9
1.2
620
800
800
1150
Conditions
Ratings
min
–60
–10
±10
–2.4
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
Marking : JQ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2315 No.6384–1/4
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